Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

Yoshinobu Kawaguchi; Shih Chieh Huang; Robert M. Farrell; Yuji Zhao; James S. Speck; Steven P. DenBaars; Shuji Nakamura

doi:10.7567/APEX.6.052103

Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

Yoshinobu Kawaguchi, Shih Chieh Huang, Robert M. Farrell, Yuji Zhao, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm²) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

Original language	English (US)
Article number	052103
Journal	Applied Physics Express
Volume	6
Issue number	5
DOIs	https://doi.org/10.7567/APEX.6.052103
State	Published - May 2013
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.7567/APEX.6.052103

Cite this

@article{9fd2be1f8ec54e09a91d4fb06ffd4a38,

title = "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes",

abstract = "The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic {"}critical{"} emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.",

author = "Yoshinobu Kawaguchi and Huang, {Shih Chieh} and Farrell, {Robert M.} and Yuji Zhao and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2013",

month = may,

doi = "10.7567/APEX.6.052103",

language = "English (US)",

volume = "6",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "5",

}

TY - JOUR

T1 - Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

AU - Kawaguchi, Yoshinobu

AU - Huang, Shih Chieh

AU - Farrell, Robert M.

AU - Zhao, Yuji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2013/5

Y1 - 2013/5

N2 - The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

AB - The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

UR - http://www.scopus.com/inward/record.url?scp=84880891477&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880891477&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.052103

DO - 10.7567/APEX.6.052103

M3 - Article

AN - SCOPUS:84880891477

SN - 1882-0778

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

IS - 5

M1 - 052103

ER -

Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this