Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

Yoshinobu Kawaguchi, Shih Chieh Huang, Robert M. Farrell, Yuji Zhao, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

Original languageEnglish (US)
Article number052103
JournalApplied Physics Express
Volume6
Issue number5
DOIs
StatePublished - May 2013
Externally publishedYes

Fingerprint

Nitrides
Semiconductor quantum wells
nitrides
Light emitting diodes
light emitting diodes
quantum wells
Wavelength
Electrons
wavelengths
electrons
Current density
Polarization
current density
output
polarization

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes. / Kawaguchi, Yoshinobu; Huang, Shih Chieh; Farrell, Robert M.; Zhao, Yuji; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji.

In: Applied Physics Express, Vol. 6, No. 5, 052103, 05.2013.

Research output: Contribution to journalArticle

Kawaguchi, Yoshinobu ; Huang, Shih Chieh ; Farrell, Robert M. ; Zhao, Yuji ; Speck, James S. ; DenBaars, Steven P. ; Nakamura, Shuji. / Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes. In: Applied Physics Express. 2013 ; Vol. 6, No. 5.
@article{9fd2be1f8ec54e09a91d4fb06ffd4a38,
title = "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes",
abstract = "The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic {"}critical{"} emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.",
author = "Yoshinobu Kawaguchi and Huang, {Shih Chieh} and Farrell, {Robert M.} and Yuji Zhao and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura",
year = "2013",
month = "5",
doi = "10.7567/APEX.6.052103",
language = "English (US)",
volume = "6",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "5",

}

TY - JOUR

T1 - Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

AU - Kawaguchi, Yoshinobu

AU - Huang, Shih Chieh

AU - Farrell, Robert M.

AU - Zhao, Yuji

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2013/5

Y1 - 2013/5

N2 - The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

AB - The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

UR - http://www.scopus.com/inward/record.url?scp=84880891477&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880891477&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.052103

DO - 10.7567/APEX.6.052103

M3 - Article

AN - SCOPUS:84880891477

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 5

M1 - 052103

ER -