Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well iii-nitride light-emitting diodes

Yoshinobu Kawaguchi, Shih Chieh Huang, Robert M. Farrell, Yuji Zhao, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.

Original languageEnglish (US)
Article number052103
JournalApplied Physics Express
Volume6
Issue number5
DOIs
StatePublished - May 1 2013
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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