Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

S. W. King, C. Ronning, R. F. Davis, M. C. Benjamin, Robert Nemanich

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory.

Original languageEnglish (US)
Pages (from-to)2086-2090
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number4
StatePublished - Aug 15 1998
Externally publishedYes

Fingerprint

discontinuity
valence
ultraviolet spectroscopy
heterojunctions
photoelectron spectroscopy
temperature
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. / King, S. W.; Ronning, C.; Davis, R. F.; Benjamin, M. C.; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 84, No. 4, 15.08.1998, p. 2086-2090.

Research output: Contribution to journalArticle

King, S. W. ; Ronning, C. ; Davis, R. F. ; Benjamin, M. C. ; Nemanich, Robert. / Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. In: Journal of Applied Physics. 1998 ; Vol. 84, No. 4. pp. 2086-2090.
@article{3d10e7e57d2749359be7b4bf39153991,
title = "Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction",
abstract = "X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory.",
author = "King, {S. W.} and C. Ronning and Davis, {R. F.} and Benjamin, {M. C.} and Robert Nemanich",
year = "1998",
month = "8",
day = "15",
language = "English (US)",
volume = "84",
pages = "2086--2090",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

AU - King, S. W.

AU - Ronning, C.

AU - Davis, R. F.

AU - Benjamin, M. C.

AU - Nemanich, Robert

PY - 1998/8/15

Y1 - 1998/8/15

N2 - X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory.

AB - X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory.

UR - http://www.scopus.com/inward/record.url?scp=0000999006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000999006&partnerID=8YFLogxK

M3 - Article

VL - 84

SP - 2086

EP - 2090

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -