Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

S. W. King, C. Ronning, R. F. Davis, M. C. Benjamin, R. J. Nemanich

Research output: Contribution to journalArticle

75 Scopus citations

Abstract

X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory.

Original languageEnglish (US)
Pages (from-to)2086-2090
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number4
DOIs
StatePublished - Aug 15 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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