@misc{ed54637301bb4095a8ce90c059d289f9,
title = "Department of energy funds gan research to replace silicon in power electronics",
author = "Yuji Zhao and Brian Santo",
note = "Funding Information: the DoE estimates that figure will double in the next eight years. The Advanced Research Projects Agency – Energy (ARPA-E) began funding research along these lines in 2013 with a program called SWITCHES1, which dealt with advancing bulk gallium nitride (GaN) power semiconductor devices, the manufacture of silicon carbide (SiC) devices using a foundry model, and the design of synthetic diamond-based transistors.",
year = "2017",
month = sep,
language = "English (US)",
volume = "60",
pages = "7--8",
journal = "Electronic Products",
issn = "0013-4953",
publisher = "Hearst Business Communications",
}