Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiao Hang Li; Tsung Ting Kao; Md Mahbub Satter; Yong O. Wei; Shuo Wang; Hongen Xie; Shyh Chiang Shen; P. Douglas Yoder; Alec M. Fischer; Fernando Ponce; Theeradetch Detchprohm; Russell D. Dupuis

doi:10.1063/1.4906590

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiao Hang Li, Tsung Ting Kao, Md Mahbub Satter, Yong O. Wei, Shuo Wang, Hongen Xie, Shyh Chiang Shen, P. Douglas Yoder, Alec M. Fischer, Fernando Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Physics

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Abstract

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm², respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

Original language	English (US)
Article number	041115
Journal	Applied Physics Letters
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.4906590
State	Published - Jan 26 2015

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Li, X. H., Kao, T. T., Satter, M. M., Wei, Y. O., Wang, S., Xie, H., Shen, S. C., Yoder, P. D., Fischer, A. M., Ponce, F., Detchprohm, T., & Dupuis, R. D. (2015). Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate. Applied Physics Letters, 106(4), Article 041115. https://doi.org/10.1063/1.4906590

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title = "Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate",

abstract = "We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.",

author = "Li, {Xiao Hang} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Wei, {Yong O.} and Shuo Wang and Hongen Xie and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Fischer, {Alec M.} and Fernando Ponce and Theeradetch Detchprohm and Dupuis, {Russell D.}",

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doi = "10.1063/1.4906590",

language = "English (US)",

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T1 - Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

AU - Li, Xiao Hang

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Wei, Yong O.

AU - Wang, Shuo

AU - Xie, Hongen

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Fischer, Alec M.

AU - Ponce, Fernando

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

PY - 2015/1/26

Y1 - 2015/1/26

N2 - We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

AB - We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

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Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

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