Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiao Hang Li, Tsung Ting Kao, Md Mahbub Satter, Yong O. Wei, Shuo Wang, Hongen Xie, Shyh Chiang Shen, P. Douglas Yoder, Alec M. Fischer, Fernando Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

Original languageEnglish (US)
Article number041115
JournalApplied Physics Letters
Volume106
Issue number4
DOIs
StatePublished - Jan 26 2015

Fingerprint

ultraviolet emission
quantum well lasers
stimulated emission
sapphire
wavelengths
lasing
ultraviolet lasers
crystal field theory
lasers
crossovers
templates
switches
valence
photoluminescence
thresholds
room temperature
polarization
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate. / Li, Xiao Hang; Kao, Tsung Ting; Satter, Md Mahbub; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Shen, Shyh Chiang; Yoder, P. Douglas; Fischer, Alec M.; Ponce, Fernando; Detchprohm, Theeradetch; Dupuis, Russell D.

In: Applied Physics Letters, Vol. 106, No. 4, 041115, 26.01.2015.

Research output: Contribution to journalArticle

Li, XH, Kao, TT, Satter, MM, Wei, YO, Wang, S, Xie, H, Shen, SC, Yoder, PD, Fischer, AM, Ponce, F, Detchprohm, T & Dupuis, RD 2015, 'Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate', Applied Physics Letters, vol. 106, no. 4, 041115. https://doi.org/10.1063/1.4906590
Li, Xiao Hang ; Kao, Tsung Ting ; Satter, Md Mahbub ; Wei, Yong O. ; Wang, Shuo ; Xie, Hongen ; Shen, Shyh Chiang ; Yoder, P. Douglas ; Fischer, Alec M. ; Ponce, Fernando ; Detchprohm, Theeradetch ; Dupuis, Russell D. / Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate. In: Applied Physics Letters. 2015 ; Vol. 106, No. 4.
@article{63f984607c7044e08451f089a8ccae71,
title = "Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate",
abstract = "We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.",
author = "Li, {Xiao Hang} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Wei, {Yong O.} and Shuo Wang and Hongen Xie and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Fischer, {Alec M.} and Fernando Ponce and Theeradetch Detchprohm and Dupuis, {Russell D.}",
year = "2015",
month = "1",
day = "26",
doi = "10.1063/1.4906590",
language = "English (US)",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

AU - Li, Xiao Hang

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Wei, Yong O.

AU - Wang, Shuo

AU - Xie, Hongen

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Fischer, Alec M.

AU - Ponce, Fernando

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

PY - 2015/1/26

Y1 - 2015/1/26

N2 - We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

AB - We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

UR - http://www.scopus.com/inward/record.url?scp=84923818591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923818591&partnerID=8YFLogxK

U2 - 10.1063/1.4906590

DO - 10.1063/1.4906590

M3 - Article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 041115

ER -