@inproceedings{e4787f74f78344a28bde4427311c726c,
title = "Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons",
abstract = "Spike timing dependent plasticity (STDP) is an important neural process that enables biological neural networks to learn by strengthening or weakening synaptic connections between neurons. This work presents simulation results and post-silicon experimental data that demonstrate for the first time the possibility of tuning the on state resistance of a type of emerging resistive memory device known as conductive bridge random access memory (CBRAM) in accordance with the biological STDP rule for neuromorphic applications. STDP behavior is demonstrated for CBRAM devices integrated with CMOS spiking neuron circuitry through back end of line post-processing for different initial resistance values and spike durations.",
keywords = "CBRAM, STDP, neuromorphic, resistive memory",
author = "D. Mahalanabis and M. Sivaraj and W. Chen and S. Shah and Hugh Barnaby and Michael Kozicki and {Blain Christen}, Jennifer and Sarma Vrudhula",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 ; Conference date: 22-05-2016 Through 25-05-2016",
year = "2016",
month = jul,
day = "29",
doi = "10.1109/ISCAS.2016.7539047",
language = "English (US)",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2314--2317",
booktitle = "ISCAS 2016 - IEEE International Symposium on Circuits and Systems",
}