Abstract

Spike timing dependent plasticity (STDP) is an important neural process that enables biological neural networks to learn by strengthening or weakening synaptic connections between neurons. This work presents simulation results and post-silicon experimental data that demonstrate for the first time the possibility of tuning the on state resistance of a type of emerging resistive memory device known as conductive bridge random access memory (CBRAM) in accordance with the biological STDP rule for neuromorphic applications. STDP behavior is demonstrated for CBRAM devices integrated with CMOS spiking neuron circuitry through back end of line post-processing for different initial resistance values and spike durations.

Original languageEnglish (US)
Title of host publicationISCAS 2016 - IEEE International Symposium on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2314-2317
Number of pages4
Volume2016-July
ISBN (Electronic)9781479953400
DOIs
StatePublished - Jul 29 2016
Event2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 - Montreal, Canada
Duration: May 22 2016May 25 2016

Other

Other2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
CountryCanada
CityMontreal
Period5/22/165/25/16

Fingerprint

Neurons
Plasticity
Demonstrations
Data storage equipment
Silicon
Tuning
Neural networks
Processing

Keywords

  • CBRAM
  • neuromorphic
  • resistive memory
  • STDP

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mahalanabis, D., Sivaraj, M., Chen, W., Shah, S., Barnaby, H., Kozicki, M., ... Vrudhula, S. (2016). Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons. In ISCAS 2016 - IEEE International Symposium on Circuits and Systems (Vol. 2016-July, pp. 2314-2317). [7539047] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2016.7539047

Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons. / Mahalanabis, D.; Sivaraj, M.; Chen, W.; Shah, S.; Barnaby, Hugh; Kozicki, Michael; Blain Christen, Jennifer; Vrudhula, Sarma.

ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. p. 2314-2317 7539047.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mahalanabis, D, Sivaraj, M, Chen, W, Shah, S, Barnaby, H, Kozicki, M, Blain Christen, J & Vrudhula, S 2016, Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons. in ISCAS 2016 - IEEE International Symposium on Circuits and Systems. vol. 2016-July, 7539047, Institute of Electrical and Electronics Engineers Inc., pp. 2314-2317, 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montreal, Canada, 5/22/16. https://doi.org/10.1109/ISCAS.2016.7539047
Mahalanabis D, Sivaraj M, Chen W, Shah S, Barnaby H, Kozicki M et al. Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons. In ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Vol. 2016-July. Institute of Electrical and Electronics Engineers Inc. 2016. p. 2314-2317. 7539047 https://doi.org/10.1109/ISCAS.2016.7539047
Mahalanabis, D. ; Sivaraj, M. ; Chen, W. ; Shah, S. ; Barnaby, Hugh ; Kozicki, Michael ; Blain Christen, Jennifer ; Vrudhula, Sarma. / Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons. ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Vol. 2016-July Institute of Electrical and Electronics Engineers Inc., 2016. pp. 2314-2317
@inproceedings{e4787f74f78344a28bde4427311c726c,
title = "Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons",
abstract = "Spike timing dependent plasticity (STDP) is an important neural process that enables biological neural networks to learn by strengthening or weakening synaptic connections between neurons. This work presents simulation results and post-silicon experimental data that demonstrate for the first time the possibility of tuning the on state resistance of a type of emerging resistive memory device known as conductive bridge random access memory (CBRAM) in accordance with the biological STDP rule for neuromorphic applications. STDP behavior is demonstrated for CBRAM devices integrated with CMOS spiking neuron circuitry through back end of line post-processing for different initial resistance values and spike durations.",
keywords = "CBRAM, neuromorphic, resistive memory, STDP",
author = "D. Mahalanabis and M. Sivaraj and W. Chen and S. Shah and Hugh Barnaby and Michael Kozicki and {Blain Christen}, Jennifer and Sarma Vrudhula",
year = "2016",
month = "7",
day = "29",
doi = "10.1109/ISCAS.2016.7539047",
language = "English (US)",
volume = "2016-July",
pages = "2314--2317",
booktitle = "ISCAS 2016 - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons

AU - Mahalanabis, D.

AU - Sivaraj, M.

AU - Chen, W.

AU - Shah, S.

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Blain Christen, Jennifer

AU - Vrudhula, Sarma

PY - 2016/7/29

Y1 - 2016/7/29

N2 - Spike timing dependent plasticity (STDP) is an important neural process that enables biological neural networks to learn by strengthening or weakening synaptic connections between neurons. This work presents simulation results and post-silicon experimental data that demonstrate for the first time the possibility of tuning the on state resistance of a type of emerging resistive memory device known as conductive bridge random access memory (CBRAM) in accordance with the biological STDP rule for neuromorphic applications. STDP behavior is demonstrated for CBRAM devices integrated with CMOS spiking neuron circuitry through back end of line post-processing for different initial resistance values and spike durations.

AB - Spike timing dependent plasticity (STDP) is an important neural process that enables biological neural networks to learn by strengthening or weakening synaptic connections between neurons. This work presents simulation results and post-silicon experimental data that demonstrate for the first time the possibility of tuning the on state resistance of a type of emerging resistive memory device known as conductive bridge random access memory (CBRAM) in accordance with the biological STDP rule for neuromorphic applications. STDP behavior is demonstrated for CBRAM devices integrated with CMOS spiking neuron circuitry through back end of line post-processing for different initial resistance values and spike durations.

KW - CBRAM

KW - neuromorphic

KW - resistive memory

KW - STDP

UR - http://www.scopus.com/inward/record.url?scp=84983429167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983429167&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2016.7539047

DO - 10.1109/ISCAS.2016.7539047

M3 - Conference contribution

VL - 2016-July

SP - 2314

EP - 2317

BT - ISCAS 2016 - IEEE International Symposium on Circuits and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -