Demonstration of mechanically exfoliated β -Ga2O3/GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu, Tsung Han Yang, Kai Fu, Hong Chen, Jingan Zhou, Xuanqi Huang, Yuji Zhao

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga2O3) and p-GaN. The detailed mechanical exfoliation process was developed and can be used for further device applications. The atomic force microscopy study showed that the exfoliated β-Ga2O3 flakes had a very smooth surface with a roughness of 0.65 nm. Transmission electron microscopy revealed a clearly defined interface between the exfoliated β-Ga2O3 and p-GaN. The p-n heterojunction exhibited a turn-on voltage of 3.6 V and a rectification ratio of ∼105. The heterojunction also showed good thermal performance up to 200 °C. Ideality factors and turn-on voltages decrease with temperature, tending toward the ideal threshold voltage of 3.2 V as determined by Silvaco simulations. This work provides valuable information on a mechanically exfoliated β-Ga2O3/GaN p-n heterojunction, which opens up the opportunities for a variety of photonic and electronic applications.

Original languageEnglish (US)
Article number162103
JournalApplied Physics Letters
Volume114
Issue number16
DOIs
StatePublished - Apr 22 2019

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Montes, J., Yang, C., Fu, H., Yang, T. H., Fu, K., Chen, H., Zhou, J., Huang, X., & Zhao, Y. (2019). Demonstration of mechanically exfoliated β -Ga2O3/GaN p-n heterojunction. Applied Physics Letters, 114(16), [162103]. https://doi.org/10.1063/1.5088516