Demonstration of mechanically exfoliated β -Ga 2 O 3 /GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu, Tsung Han Yang, Kai Fu, Hong Chen, Jingan Zhou, Xuanqi Huang, Yuji Zhao

Research output: Contribution to journalArticle

Abstract

This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga 2 O 3 ) and p-GaN. The detailed mechanical exfoliation process was developed and can be used for further device applications. The atomic force microscopy study showed that the exfoliated β-Ga 2 O 3 flakes had a very smooth surface with a roughness of 0.65 nm. Transmission electron microscopy revealed a clearly defined interface between the exfoliated β-Ga 2 O 3 and p-GaN. The p-n heterojunction exhibited a turn-on voltage of 3.6 V and a rectification ratio of ∼10 5 . The heterojunction also showed good thermal performance up to 200 °C. Ideality factors and turn-on voltages decrease with temperature, tending toward the ideal threshold voltage of 3.2 V as determined by Silvaco simulations. This work provides valuable information on a mechanically exfoliated β-Ga 2 O 3 /GaN p-n heterojunction, which opens up the opportunities for a variety of photonic and electronic applications.

Original languageEnglish (US)
Article number162103
JournalApplied Physics Letters
Volume114
Issue number16
DOIs
StatePublished - Apr 22 2019

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heterojunctions
gallium oxides
flakes
electric potential
rectification
threshold voltage
roughness
atomic force microscopy
photonics
transmission electron microscopy
electronics
simulation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Demonstration of mechanically exfoliated β -Ga 2 O 3 /GaN p-n heterojunction . / Montes, Jossue; Yang, Chen; Fu, Houqiang; Yang, Tsung Han; Fu, Kai; Chen, Hong; Zhou, Jingan; Huang, Xuanqi; Zhao, Yuji.

In: Applied Physics Letters, Vol. 114, No. 16, 162103, 22.04.2019.

Research output: Contribution to journalArticle

Montes, J, Yang, C, Fu, H, Yang, TH, Fu, K, Chen, H, Zhou, J, Huang, X & Zhao, Y 2019, ' Demonstration of mechanically exfoliated β -Ga 2 O 3 /GaN p-n heterojunction ', Applied Physics Letters, vol. 114, no. 16, 162103. https://doi.org/10.1063/1.5088516
Montes, Jossue ; Yang, Chen ; Fu, Houqiang ; Yang, Tsung Han ; Fu, Kai ; Chen, Hong ; Zhou, Jingan ; Huang, Xuanqi ; Zhao, Yuji. / Demonstration of mechanically exfoliated β -Ga 2 O 3 /GaN p-n heterojunction In: Applied Physics Letters. 2019 ; Vol. 114, No. 16.
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AU - Huang, Xuanqi

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