Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

Chen Yang; Houqiang Fu; Po Yi Su; Hanxiao Liu; Kai Fu; Xuanqi Huang; Tsung Han Yang; Hong Chen; Jingan Zhou; Xuguang Deng; Jossue Montes; Xin Qi; Fernando A. Ponce; Yuji Zhao

doi:10.1063/5.0018473

Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

Chen Yang, Houqiang Fu, Po Yi Su, Hanxiao Liu, Kai Fu, Xuanqi Huang, Tsung Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Xin Qi, Fernando A. Ponce, Yuji Zhao

Research output: Contribution to journal › Article

Abstract

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

Original language	English (US)
Article number	052105
Journal	Applied Physics Letters
Volume	117
Issue number	5
DOIs	https://doi.org/10.1063/5.0018473
State	Published - Aug 3 2020

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0018473

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Yang, C., Fu, H., Su, P. Y., Liu, H., Fu, K., Huang, X., Yang, T. H., Chen, H., Zhou, J., Deng, X., Montes, J., Qi, X., Ponce, F. A., & Zhao, Y. (2020). Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment. Applied Physics Letters, 117(5), [052105]. https://doi.org/10.1063/5.0018473

Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment. / Yang, Chen; Fu, Houqiang; Su, Po Yi; Liu, Hanxiao; Fu, Kai; Huang, Xuanqi; Yang, Tsung Han; Chen, Hong; Zhou, Jingan; Deng, Xuguang; Montes, Jossue; Qi, Xin; Ponce, Fernando A.; Zhao, Yuji.

In: Applied Physics Letters, Vol. 117, No. 5, 052105, 03.08.2020.

Research output: Contribution to journal › Article

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abstract = "We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics. ",

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AU - Yang, Chen

AU - Fu, Houqiang

AU - Su, Po Yi

AU - Liu, Hanxiao

AU - Fu, Kai

AU - Huang, Xuanqi

AU - Yang, Tsung Han

AU - Chen, Hong

AU - Zhou, Jingan

AU - Deng, Xuguang

AU - Montes, Jossue

AU - Qi, Xin

AU - Ponce, Fernando A.

AU - Zhao, Yuji

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AB - We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

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