Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

Chen Yang; Houqiang Fu; Po Yi Su; Hanxiao Liu; Kai Fu; Xuanqi Huang; Tsung Han Yang; Hong Chen; Jingan Zhou; Xuguang Deng; Jossue Montes; Xin Qi; Fernando A. Ponce; Yuji Zhao

doi:10.1063/5.0018473

Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

Chen Yang, Houqiang Fu, Po Yi Su, Hanxiao Liu, Kai Fu, Xuanqi Huang, Tsung Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Xin Qi, Fernando A. Ponce, Yuji Zhao

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

Original language	English (US)
Article number	052105
Journal	Applied Physics Letters
Volume	117
Issue number	5
DOIs	https://doi.org/10.1063/5.0018473
State	Published - Aug 3 2020
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0018473

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@article{c3586210bdd8421cac90580b0346b829,

title = "Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment",

abstract = "We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics. ",

author = "Chen Yang and Houqiang Fu and Su, {Po Yi} and Hanxiao Liu and Kai Fu and Xuanqi Huang and Yang, {Tsung Han} and Hong Chen and Jingan Zhou and Xuguang Deng and Jossue Montes and Xin Qi and Ponce, {Fernando A.} and Yuji Zhao",

note = "Funding Information: This work was supported by the ARPA-E PNDIODES Program monitored by Dr. Isik Kizilyalli and partially supported by the NASA HOTTech Program Grant No. 80NSSC17K0768. The device fabrication was performed at the Center for Solid State Electronics Research at Arizona State University. Access to the NanoFab was supported, in part, by NSF Contract No. ECCS-1542160. Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = aug,

day = "3",

doi = "10.1063/5.0018473",

language = "English (US)",

volume = "117",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

AU - Yang, Chen

AU - Fu, Houqiang

AU - Su, Po Yi

AU - Liu, Hanxiao

AU - Fu, Kai

AU - Huang, Xuanqi

AU - Yang, Tsung Han

AU - Chen, Hong

AU - Zhou, Jingan

AU - Deng, Xuguang

AU - Montes, Jossue

AU - Qi, Xin

AU - Ponce, Fernando A.

AU - Zhao, Yuji

N1 - Funding Information: This work was supported by the ARPA-E PNDIODES Program monitored by Dr. Isik Kizilyalli and partially supported by the NASA HOTTech Program Grant No. 80NSSC17K0768. The device fabrication was performed at the Center for Solid State Electronics Research at Arizona State University. Access to the NanoFab was supported, in part, by NSF Contract No. ECCS-1542160. Publisher Copyright: © 2020 Author(s).

PY - 2020/8/3

Y1 - 2020/8/3

N2 - We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

AB - We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=85089304262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85089304262&partnerID=8YFLogxK

U2 - 10.1063/5.0018473

DO - 10.1063/5.0018473

M3 - Article

AN - SCOPUS:85089304262

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 052105

ER -

Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

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