Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment

Chen Yang, Houqiang Fu, Po Yi Su, Hanxiao Liu, Kai Fu, Xuanqi Huang, Tsung Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Xin Qi, Fernando A. Ponce, Yuji Zhao

Research output: Contribution to journalArticle

Abstract

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

Original languageEnglish (US)
Article number052105
JournalApplied Physics Letters
Volume117
Issue number5
DOIs
StatePublished - Aug 3 2020

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yang, C., Fu, H., Su, P. Y., Liu, H., Fu, K., Huang, X., Yang, T. H., Chen, H., Zhou, J., Deng, X., Montes, J., Qi, X., Ponce, F. A., & Zhao, Y. (2020). Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment. Applied Physics Letters, 117(5), [052105]. https://doi.org/10.1063/5.0018473