Abstract
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The device structure mimics the silicon-on-insulator (SOI) technology, consisting of thin n -AlN epilayer as the device active region and thick resistive AlN underlayer as the insulator. At room temperature, the devices show outstanding performances with a low turn-ON voltage of 1.2 V, a high ON/OFF ratio of \sim 10^{5} , a low ideality factor of 5.5, and a low reverse leakage current below 1 nA. The devices also exhibit excellent thermal stability over 500 K owing to the ultra-wide bandgap of AlN. The breakdown voltage of the devices can be further improved by employing field plate, edge termination technologies, and optimizing the SOI-like device structure. This letter presents a cost-effective route to high performance AlN-based Schottky barrier diodes for high-power, high-voltage, and high-temperature applications.
| Original language | English (US) |
|---|---|
| Article number | 7968502 |
| Pages (from-to) | 1286-1289 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 38 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1 2017 |
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Keywords
- Aluminum nitride
- breakdown
- high temperature
- power electronics
- Schottky barrier diodes
- semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV. / Fu, Houqiang; Baranowski, Izak; Huang, Xuanqi; Chen, Hong; Lu, Zhijian; Montes, Jossue; Zhang, Xiaodong; Zhao, Yuji.
In: IEEE Electron Device Letters, Vol. 38, No. 9, 7968502, 01.09.2017, p. 1286-1289.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV
AU - Fu, Houqiang
AU - Baranowski, Izak
AU - Huang, Xuanqi
AU - Chen, Hong
AU - Lu, Zhijian
AU - Montes, Jossue
AU - Zhang, Xiaodong
AU - Zhao, Yuji
PY - 2017/9/1
Y1 - 2017/9/1
N2 - This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The device structure mimics the silicon-on-insulator (SOI) technology, consisting of thin n -AlN epilayer as the device active region and thick resistive AlN underlayer as the insulator. At room temperature, the devices show outstanding performances with a low turn-ON voltage of 1.2 V, a high ON/OFF ratio of \sim 10^{5} , a low ideality factor of 5.5, and a low reverse leakage current below 1 nA. The devices also exhibit excellent thermal stability over 500 K owing to the ultra-wide bandgap of AlN. The breakdown voltage of the devices can be further improved by employing field plate, edge termination technologies, and optimizing the SOI-like device structure. This letter presents a cost-effective route to high performance AlN-based Schottky barrier diodes for high-power, high-voltage, and high-temperature applications.
AB - This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The device structure mimics the silicon-on-insulator (SOI) technology, consisting of thin n -AlN epilayer as the device active region and thick resistive AlN underlayer as the insulator. At room temperature, the devices show outstanding performances with a low turn-ON voltage of 1.2 V, a high ON/OFF ratio of \sim 10^{5} , a low ideality factor of 5.5, and a low reverse leakage current below 1 nA. The devices also exhibit excellent thermal stability over 500 K owing to the ultra-wide bandgap of AlN. The breakdown voltage of the devices can be further improved by employing field plate, edge termination technologies, and optimizing the SOI-like device structure. This letter presents a cost-effective route to high performance AlN-based Schottky barrier diodes for high-power, high-voltage, and high-temperature applications.
KW - Aluminum nitride
KW - breakdown
KW - high temperature
KW - power electronics
KW - Schottky barrier diodes
KW - semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85023167352&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85023167352&partnerID=8YFLogxK
U2 - 10.1109/LED.2017.2723603
DO - 10.1109/LED.2017.2723603
M3 - Article
AN - SCOPUS:85023167352
VL - 38
SP - 1286
EP - 1289
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 9
M1 - 7968502
ER -