Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV

Houqiang Fu, Izak Baranowski, Xuanqi Huang, Hong Chen, Zhijian Lu, Jossue Montes, Xiaodong Zhang, Yuji Zhao

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The device structure mimics the silicon-on-insulator (SOI) technology, consisting of thin n -AlN epilayer as the device active region and thick resistive AlN underlayer as the insulator. At room temperature, the devices show outstanding performances with a low turn-ON voltage of 1.2 V, a high ON/OFF ratio of \sim 10^{5} , a low ideality factor of 5.5, and a low reverse leakage current below 1 nA. The devices also exhibit excellent thermal stability over 500 K owing to the ultra-wide bandgap of AlN. The breakdown voltage of the devices can be further improved by employing field plate, edge termination technologies, and optimizing the SOI-like device structure. This letter presents a cost-effective route to high performance AlN-based Schottky barrier diodes for high-power, high-voltage, and high-temperature applications.

Original languageEnglish (US)
Article number7968502
Pages (from-to)1286-1289
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number9
DOIs
StatePublished - Sep 1 2017

Fingerprint

Schottky barrier diodes
Demonstrations
Silicon on insulator technology
Organic Chemicals
High temperature applications
Aluminum Oxide
Epilayers
Organic chemicals
Electric potential
Silicon
Electric breakdown
Sapphire
Leakage currents
Chemical vapor deposition
Energy gap
Thermodynamic stability
Metals
Substrates
Costs
Temperature

Keywords

  • Aluminum nitride
  • breakdown
  • high temperature
  • power electronics
  • Schottky barrier diodes
  • semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV. / Fu, Houqiang; Baranowski, Izak; Huang, Xuanqi; Chen, Hong; Lu, Zhijian; Montes, Jossue; Zhang, Xiaodong; Zhao, Yuji.

In: IEEE Electron Device Letters, Vol. 38, No. 9, 7968502, 01.09.2017, p. 1286-1289.

Research output: Contribution to journalArticle

Fu, H, Baranowski, I, Huang, X, Chen, H, Lu, Z, Montes, J, Zhang, X & Zhao, Y 2017, 'Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV', IEEE Electron Device Letters, vol. 38, no. 9, 7968502, pp. 1286-1289. https://doi.org/10.1109/LED.2017.2723603
Fu H, Baranowski I, Huang X, Chen H, Lu Z, Montes J et al. Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV. IEEE Electron Device Letters. 2017 Sep 1;38(9):1286-1289. 7968502. https://doi.org/10.1109/LED.2017.2723603
Fu, Houqiang ; Baranowski, Izak ; Huang, Xuanqi ; Chen, Hong ; Lu, Zhijian ; Montes, Jossue ; Zhang, Xiaodong ; Zhao, Yuji. / Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 9. pp. 1286-1289.
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