Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV

Houqiang Fu, Izak Baranowski, Xuanqi Huang, Hong Chen, Zhijian Lu, Jossue Montes, Xiaodong Zhang, Yuji Zhao

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The device structure mimics the silicon-on-insulator (SOI) technology, consisting of thin n -AlN epilayer as the device active region and thick resistive AlN underlayer as the insulator. At room temperature, the devices show outstanding performances with a low turn-ON voltage of 1.2 V, a high ON/OFF ratio of \sim 10^{5} , a low ideality factor of 5.5, and a low reverse leakage current below 1 nA. The devices also exhibit excellent thermal stability over 500 K owing to the ultra-wide bandgap of AlN. The breakdown voltage of the devices can be further improved by employing field plate, edge termination technologies, and optimizing the SOI-like device structure. This letter presents a cost-effective route to high performance AlN-based Schottky barrier diodes for high-power, high-voltage, and high-temperature applications.

Original languageEnglish (US)
Article number7968502
Pages (from-to)1286-1289
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number9
DOIs
StatePublished - Sep 1 2017

Keywords

  • Aluminum nitride
  • breakdown
  • high temperature
  • power electronics
  • Schottky barrier diodes
  • semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Fu, H., Baranowski, I., Huang, X., Chen, H., Lu, Z., Montes, J., Zhang, X., & Zhao, Y. (2017). Demonstration of AlN Schottky Barrier Diodes with Blocking Voltage over 1 kV. IEEE Electron Device Letters, 38(9), 1286-1289. [7968502]. https://doi.org/10.1109/LED.2017.2723603