Abstract
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The device structure mimics the silicon-on-insulator (SOI) technology, consisting of thin n -AlN epilayer as the device active region and thick resistive AlN underlayer as the insulator. At room temperature, the devices show outstanding performances with a low turn-ON voltage of 1.2 V, a high ON/OFF ratio of \sim 10^{5} , a low ideality factor of 5.5, and a low reverse leakage current below 1 nA. The devices also exhibit excellent thermal stability over 500 K owing to the ultra-wide bandgap of AlN. The breakdown voltage of the devices can be further improved by employing field plate, edge termination technologies, and optimizing the SOI-like device structure. This letter presents a cost-effective route to high performance AlN-based Schottky barrier diodes for high-power, high-voltage, and high-temperature applications.
Original language | English (US) |
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Article number | 7968502 |
Pages (from-to) | 1286-1289 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2017 |
Keywords
- Aluminum nitride
- Schottky barrier diodes
- breakdown
- high temperature
- power electronics
- semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering