Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages

Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The fabrication and dc characteristics of AlGaN/GaN-based heterostructure field-effect transistors (HFET) were reported. The device grown on sapphire substrates has a high drain-current-driving and gate-control capabilities. The incorporation of the SiO2 insulated gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the channel carrier mobility. The device is capable to deliver high electron density yet ensures an excellent pinch-off property.

Original languageEnglish (US)
Pages (from-to)4649-4651
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number24
DOIs
StatePublished - Dec 9 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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