TY - GEN
T1 - Degradation of Surface Recombination Velocity at a-Si/c-Si interface under light and temperature
AU - Manzoor, Salman
AU - Bertoni, Mariana
N1 - Funding Information:
The work presented herein was funded by the U.S. Department of Energy, Energy Efficiency and Renewable Energy Program, under Award Number DE-EE0008979.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - With silicon heterojunction (SHJ) solar cells at their practical efficiency limit, their long-term reliability and stability remains the hindering block toward mass adoption. Precisely, it is the degradation of passivation over time under field operating conditions at amorphous silicon (a-Si:H) and crystalline silicon (c-Si) interface that is a concern. Therefore, we investigate the passivation quality of a-Si:H/c-Si in terms of interface defect and charge density by extracting surface recombination velocity (SRV) using the temperature- and injection- dependent lifetime spectroscopy technique. Our results show passivation quality of the interface degrades at elevated temperature due to thermally activated defects at the surface. Moreover, temporal dependence of a-Si:H/c-Si interface passivation shows degradation due to increase in SRV originating from failing chemical passivation exhibited by an increase in defect density at the interface. Interestingly, field passivation seems to remain the same through the time of these experiments.
AB - With silicon heterojunction (SHJ) solar cells at their practical efficiency limit, their long-term reliability and stability remains the hindering block toward mass adoption. Precisely, it is the degradation of passivation over time under field operating conditions at amorphous silicon (a-Si:H) and crystalline silicon (c-Si) interface that is a concern. Therefore, we investigate the passivation quality of a-Si:H/c-Si in terms of interface defect and charge density by extracting surface recombination velocity (SRV) using the temperature- and injection- dependent lifetime spectroscopy technique. Our results show passivation quality of the interface degrades at elevated temperature due to thermally activated defects at the surface. Moreover, temporal dependence of a-Si:H/c-Si interface passivation shows degradation due to increase in SRV originating from failing chemical passivation exhibited by an increase in defect density at the interface. Interestingly, field passivation seems to remain the same through the time of these experiments.
KW - degradation
KW - lifetime
KW - silicon heterojunction
KW - surface passivation
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U2 - 10.1109/PVSC43889.2021.9518982
DO - 10.1109/PVSC43889.2021.9518982
M3 - Conference contribution
AN - SCOPUS:85115917922
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1286
EP - 1288
BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Y2 - 20 June 2021 through 25 June 2021
ER -