S. M. Goodnick, C. W. Wilmsen, J. F. Wager

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


ITO on p-Si solar cells are found to degrade at elevated temperatures due to a loss of fill factor associated wiht the growth of oxide at the ITO/Si interface. This growth appears to be due to the diffusion of oxygen through the ITO to form SiO//2. This diffusion was found not to be limited by th ITO and hence the reaction rate is controlled by interfacial properties. An extrapolation of the degradation rate at elevated temperatures to room temperature shows that this reaction should proceed extremely slowly at room temperature.

Original languageEnglish (US)
Pages (from-to)1175-1180
Number of pages6
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Jan 1 1980
Externally publishedYes
EventConf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA
Duration: Jan 7 1980Jan 10 1980

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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