Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Alessandro Caria, Carlo De Santi, Filippo Zamperetti, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We present an investigation on the stability of high periodicity (30 pairs) multiple quantum well InGaN-GaN devices for photodetection and light harvesting in the UV and visible spectral range. The devices under test were characterized during optical stress by I-V measurements in dark condition and illuminated with a monochromatic LD emitting at 405 nm with intensities ranging from 1 mW/cm2to 50 W/cm2. We submitted the devices to several step-stress experiments: a first one in short-circuit condition at 100 °C baseplate temperature with monochromatic excitation from 361 W/cm2 to 1164 W/cm2; a second one at fixed optical power of 589 W/cm2 and baseplate temperature increasing from 35°C to 175 °C. We also evaluated the carrier flow induced degradation by means of a current stress, ranging from 1 A/cm2 to 14 A/cm2, without optical excitation. We then performed a 50 hours stress at 175 °C baseplate temperature and 589.3 W/cm2 excitation. During this stress the open-circuit voltage and the optical-to-electrical conversion efficiency significantly decreased, especially at low characterization intensities, whereas short-circuit current and external quantum efficiency showed almost no variation.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices XV
EditorsHiroshi Fujioka, Hadis Morkoc, Ulrich T. Schwarz
PublisherSPIE
ISBN (Electronic)9781510633230
DOIs
StatePublished - 2020
EventGallium Nitride Materials and Devices XV 2020 - San Francisco, United States
Duration: Feb 4 2020Feb 6 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11280
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XV 2020
CountryUnited States
CitySan Francisco
Period2/4/202/6/20

Keywords

  • Gallium Nitride
  • Multiple Quantum Wells
  • Optical Stress
  • Photodetectors
  • Solar Cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Caria, A., De Santi, C., Zamperetti, F., Huang, X., Fu, H., Chen, H., Zhao, Y., Meneghesso, G., Zanoni, E., & Meneghini, M. (2020). Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. In H. Fujioka, H. Morkoc, & U. T. Schwarz (Eds.), Gallium Nitride Materials and Devices XV [112800E] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280). SPIE. https://doi.org/10.1117/12.2547590