Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Alessandro Caria; Carlo De Santi; Filippo Zamperetti; Xuanqi Huang; Houqiang Fu; Hong Chen; Yuji Zhao; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini

doi:10.1117/12.2547590

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Alessandro Caria, Carlo De Santi, Filippo Zamperetti, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We present an investigation on the stability of high periodicity (30 pairs) multiple quantum well InGaN-GaN devices for photodetection and light harvesting in the UV and visible spectral range. The devices under test were characterized during optical stress by I-V measurements in dark condition and illuminated with a monochromatic LD emitting at 405 nm with intensities ranging from 1 mW/cm²to 50 W/cm². We submitted the devices to several step-stress experiments: a first one in short-circuit condition at 100 °C baseplate temperature with monochromatic excitation from 361 W/cm² to 1164 W/cm²; a second one at fixed optical power of 589 W/cm² and baseplate temperature increasing from 35°C to 175 °C. We also evaluated the carrier flow induced degradation by means of a current stress, ranging from 1 A/cm² to 14 A/cm², without optical excitation. We then performed a 50 hours stress at 175 °C baseplate temperature and 589.3 W/cm² excitation. During this stress the open-circuit voltage and the optical-to-electrical conversion efficiency significantly decreased, especially at low characterization intensities, whereas short-circuit current and external quantum efficiency showed almost no variation.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices XV
Editors	Hiroshi Fujioka, Hadis Morkoc, Ulrich T. Schwarz
Publisher	SPIE
ISBN (Electronic)	9781510633230
DOIs	https://doi.org/10.1117/12.2547590
State	Published - 2020
Event	Gallium Nitride Materials and Devices XV 2020 - San Francisco, United States Duration: Feb 4 2020 → Feb 6 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11280
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Gallium Nitride Materials and Devices XV 2020
Country/Territory	United States
City	San Francisco
Period	2/4/20 → 2/6/20

Keywords

Gallium Nitride
Multiple Quantum Wells
Optical Stress
Photodetectors
Solar Cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2547590

Cite this

Caria, A., De Santi, C., Zamperetti, F., Huang, X., Fu, H., Chen, H., Zhao, Y., Meneghesso, G., Zanoni, E., & Meneghini, M. (2020). Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. In H. Fujioka, H. Morkoc, & U. T. Schwarz (Eds.), Gallium Nitride Materials and Devices XV Article 112800E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280). SPIE. https://doi.org/10.1117/12.2547590

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. / Caria, Alessandro; De Santi, Carlo; Zamperetti, Filippo et al.
Gallium Nitride Materials and Devices XV. ed. / Hiroshi Fujioka; Hadis Morkoc; Ulrich T. Schwarz. SPIE, 2020. 112800E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Caria, A, De Santi, C, Zamperetti, F, Huang, X, Fu, H, Chen, H, Zhao, Y, Meneghesso, G, Zanoni, E & Meneghini, M 2020, Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. in H Fujioka, H Morkoc & UT Schwarz (eds), Gallium Nitride Materials and Devices XV., 112800E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11280, SPIE, Gallium Nitride Materials and Devices XV 2020, San Francisco, United States, 2/4/20. https://doi.org/10.1117/12.2547590

Caria A, De Santi C, Zamperetti F, Huang X, Fu H, Chen H et al. Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition. In Fujioka H, Morkoc H, Schwarz UT, editors, Gallium Nitride Materials and Devices XV. SPIE. 2020. 112800E. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2547590

@inproceedings{0aa1a3fcd3d9472780903d25b7199afb,

title = "Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition",

abstract = "We present an investigation on the stability of high periodicity (30 pairs) multiple quantum well InGaN-GaN devices for photodetection and light harvesting in the UV and visible spectral range. The devices under test were characterized during optical stress by I-V measurements in dark condition and illuminated with a monochromatic LD emitting at 405 nm with intensities ranging from 1 mW/cm2to 50 W/cm2. We submitted the devices to several step-stress experiments: a first one in short-circuit condition at 100 °C baseplate temperature with monochromatic excitation from 361 W/cm2 to 1164 W/cm2; a second one at fixed optical power of 589 W/cm2 and baseplate temperature increasing from 35°C to 175 °C. We also evaluated the carrier flow induced degradation by means of a current stress, ranging from 1 A/cm2 to 14 A/cm2, without optical excitation. We then performed a 50 hours stress at 175 °C baseplate temperature and 589.3 W/cm2 excitation. During this stress the open-circuit voltage and the optical-to-electrical conversion efficiency significantly decreased, especially at low characterization intensities, whereas short-circuit current and external quantum efficiency showed almost no variation.",

keywords = "Gallium Nitride, Multiple Quantum Wells, Optical Stress, Photodetectors, Solar Cells",

author = "Alessandro Caria and {De Santi}, Carlo and Filippo Zamperetti and Xuanqi Huang and Houqiang Fu and Hong Chen and Yuji Zhao and Gaudenzio Meneghesso and Enrico Zanoni and Matteo Meneghini",

note = "Funding Information: This research was partly performed within project INTERNET OF THINGS: SVILUPPI METODOLOGICI, TECNOLOGICI E APPLICATIVI, co-founded (2018-2022) by the Italian Ministry of Education, Universities and Research (MIUR) under the aegis of the {"}Fondo per il finanziamento dei dipartimenti universitari di eccellenza{"} initiative (Law 232/2016). Publisher Copyright: {\textcopyright} 2020 SPIE.; Gallium Nitride Materials and Devices XV 2020 ; Conference date: 04-02-2020 Through 06-02-2020",

year = "2020",

doi = "10.1117/12.2547590",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Hiroshi Fujioka and Hadis Morkoc and Schwarz, {Ulrich T.}",

booktitle = "Gallium Nitride Materials and Devices XV",

}

TY - GEN

T1 - Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

AU - Caria, Alessandro

AU - De Santi, Carlo

AU - Zamperetti, Filippo

AU - Huang, Xuanqi

AU - Fu, Houqiang

AU - Chen, Hong

AU - Zhao, Yuji

AU - Meneghesso, Gaudenzio

AU - Zanoni, Enrico

AU - Meneghini, Matteo

N1 - Funding Information: This research was partly performed within project INTERNET OF THINGS: SVILUPPI METODOLOGICI, TECNOLOGICI E APPLICATIVI, co-founded (2018-2022) by the Italian Ministry of Education, Universities and Research (MIUR) under the aegis of the "Fondo per il finanziamento dei dipartimenti universitari di eccellenza" initiative (Law 232/2016). Publisher Copyright: © 2020 SPIE.

PY - 2020

Y1 - 2020

N2 - We present an investigation on the stability of high periodicity (30 pairs) multiple quantum well InGaN-GaN devices for photodetection and light harvesting in the UV and visible spectral range. The devices under test were characterized during optical stress by I-V measurements in dark condition and illuminated with a monochromatic LD emitting at 405 nm with intensities ranging from 1 mW/cm2to 50 W/cm2. We submitted the devices to several step-stress experiments: a first one in short-circuit condition at 100 °C baseplate temperature with monochromatic excitation from 361 W/cm2 to 1164 W/cm2; a second one at fixed optical power of 589 W/cm2 and baseplate temperature increasing from 35°C to 175 °C. We also evaluated the carrier flow induced degradation by means of a current stress, ranging from 1 A/cm2 to 14 A/cm2, without optical excitation. We then performed a 50 hours stress at 175 °C baseplate temperature and 589.3 W/cm2 excitation. During this stress the open-circuit voltage and the optical-to-electrical conversion efficiency significantly decreased, especially at low characterization intensities, whereas short-circuit current and external quantum efficiency showed almost no variation.

AB - We present an investigation on the stability of high periodicity (30 pairs) multiple quantum well InGaN-GaN devices for photodetection and light harvesting in the UV and visible spectral range. The devices under test were characterized during optical stress by I-V measurements in dark condition and illuminated with a monochromatic LD emitting at 405 nm with intensities ranging from 1 mW/cm2to 50 W/cm2. We submitted the devices to several step-stress experiments: a first one in short-circuit condition at 100 °C baseplate temperature with monochromatic excitation from 361 W/cm2 to 1164 W/cm2; a second one at fixed optical power of 589 W/cm2 and baseplate temperature increasing from 35°C to 175 °C. We also evaluated the carrier flow induced degradation by means of a current stress, ranging from 1 A/cm2 to 14 A/cm2, without optical excitation. We then performed a 50 hours stress at 175 °C baseplate temperature and 589.3 W/cm2 excitation. During this stress the open-circuit voltage and the optical-to-electrical conversion efficiency significantly decreased, especially at low characterization intensities, whereas short-circuit current and external quantum efficiency showed almost no variation.

KW - Gallium Nitride

KW - Multiple Quantum Wells

KW - Optical Stress

KW - Photodetectors

KW - Solar Cells

UR - http://www.scopus.com/inward/record.url?scp=85082694777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85082694777&partnerID=8YFLogxK

U2 - 10.1117/12.2547590

DO - 10.1117/12.2547590

M3 - Conference contribution

AN - SCOPUS:85082694777

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices XV

A2 - Fujioka, Hiroshi

A2 - Morkoc, Hadis

A2 - Schwarz, Ulrich T.

PB - SPIE

T2 - Gallium Nitride Materials and Devices XV 2020

Y2 - 4 February 2020 through 6 February 2020

ER -

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this