Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Mee Yi Ryu; Y. K. Yeo; M. Ahoujja; Tom Harris; Richard Beeler; John Kouvetakis

doi:10.1063/1.4754625

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge_1-ySn_y (y=0.06%) grown on n-Si substrate

Mee Yi Ryu, Y. K. Yeo, M. Ahoujja, Tom Harris, Richard Beeler, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

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Abstract

Electrical properties of p-Ge_1-ySn_y (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge_1-ySn_y/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge_1-ySn_y layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge_1-ySn_y layer alone.

Original language	English (US)
Article number	131110
Journal	Applied Physics Letters
Volume	101
Issue number	13
DOIs	https://doi.org/10.1063/1.4754625
State	Published - Sep 24 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4754625

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title = "Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate",

abstract = "Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.",

author = "Ryu, {Mee Yi} and Yeo, {Y. K.} and M. Ahoujja and Tom Harris and Richard Beeler and John Kouvetakis",

note = "Funding Information: The authors would like to thank Dr. Gernot S. Pomrenke of the Air Force Office of Scientific Research for supporting this work and Dr. Dave C. Look for his valuable discussions. This research (M.Y.R.) was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0021555). ",

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doi = "10.1063/1.4754625",

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AU - Ryu, Mee Yi

AU - Yeo, Y. K.

AU - Ahoujja, M.

AU - Harris, Tom

AU - Beeler, Richard

AU - Kouvetakis, John

N1 - Funding Information: The authors would like to thank Dr. Gernot S. Pomrenke of the Air Force Office of Scientific Research for supporting this work and Dr. Dave C. Look for his valuable discussions. This research (M.Y.R.) was also supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0021555).

PY - 2012/9/24

Y1 - 2012/9/24

N2 - Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.

AB - Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.

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Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge_1-ySn_y (y=0.06%) grown on n-Si substrate

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