Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Mee Yi Ryu, Y. K. Yeo, M. Ahoujja, Tom Harris, Richard Beeler, John Kouvetakis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.

Original languageEnglish (US)
Article number131110
JournalApplied Physics Letters
Volume101
Issue number13
DOIs
StatePublished - Sep 24 2012

Fingerprint

conduction
conductivity
electrical properties
Hall effect
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate. / Ryu, Mee Yi; Yeo, Y. K.; Ahoujja, M.; Harris, Tom; Beeler, Richard; Kouvetakis, John.

In: Applied Physics Letters, Vol. 101, No. 13, 131110, 24.09.2012.

Research output: Contribution to journalArticle

@article{a67ba742a1a6409b82172b8eb3b3e226,
title = "Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06{\%}) grown on n-Si substrate",
abstract = "Electrical properties of p-Ge1-ySny (y=0.06{\%}) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.",
author = "Ryu, {Mee Yi} and Yeo, {Y. K.} and M. Ahoujja and Tom Harris and Richard Beeler and John Kouvetakis",
year = "2012",
month = "9",
day = "24",
doi = "10.1063/1.4754625",
language = "English (US)",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

AU - Ryu, Mee Yi

AU - Yeo, Y. K.

AU - Ahoujja, M.

AU - Harris, Tom

AU - Beeler, Richard

AU - Kouvetakis, John

PY - 2012/9/24

Y1 - 2012/9/24

N2 - Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.

AB - Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.

UR - http://www.scopus.com/inward/record.url?scp=84886486084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886486084&partnerID=8YFLogxK

U2 - 10.1063/1.4754625

DO - 10.1063/1.4754625

M3 - Article

AN - SCOPUS:84886486084

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 131110

ER -