Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrate

Mee Yi Ryu, Y. K. Yeo, M. Ahoujja, Tom Harris, Richard Beeler, John Kouvetakis

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Abstract

Electrical properties of p-Ge1-ySny (y=0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1-ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1-ySny layer below 50K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1-ySny layer alone.

Original languageEnglish (US)
Article number131110
JournalApplied Physics Letters
Volume101
Issue number13
DOIs
StatePublished - Sep 24 2012

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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