Defects at the surface of β -Ga2O3 produced by Ar plasma exposure

A. Y. Polyakov, In Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David Smith, S. J. Pearton

Research output: Contribution to journalArticle

Abstract

Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V to -0.02 V due to the buildup of deep trap concentration in the near surface region. Deep level spectra measurements indicate a strong increase in the top ∼200 nm of the plasma treated layer of the concentration of E2∗ (Ec - 0.8 eV) and especially E3 (Ec - 1.05 eV) deep electron traps. Capacitance-voltage profiling with monochromatic illumination also indicated a large increase in the upper ∼100 nm of the film in the concentration of deep acceptors with optical threshold for an ionization of ∼2.3 eV and 3.1 eV. Such defects at the surface led to a significant increase in reverse current, an increase in the ideality factor in forward current, and a dramatic decrease in the diffusion length of nonequilibrium charge carriers from 450 nm to 150 nm.

Original languageEnglish (US)
Article number061102
JournalAPL Materials
Volume7
Issue number6
DOIs
StatePublished - Jun 1 2019

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Plasmas
Defects
Electron traps
Vapor phase epitaxy
Inductively coupled plasma
Electric potential
Charge carriers
Ionization
Diodes
Capacitance
Lighting
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Polyakov, A. Y., Lee, I. H., Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., ... Pearton, S. J. (2019). Defects at the surface of β -Ga2O3 produced by Ar plasma exposure. APL Materials, 7(6), [061102]. https://doi.org/10.1063/1.5109025

Defects at the surface of β -Ga2O3 produced by Ar plasma exposure. / Polyakov, A. Y.; Lee, In Hwan; Smirnov, N. B.; Yakimov, E. B.; Shchemerov, I. V.; Chernykh, A. V.; Kochkova, A. I.; Vasilev, A. A.; Carey, P. H.; Ren, F.; Smith, David; Pearton, S. J.

In: APL Materials, Vol. 7, No. 6, 061102, 01.06.2019.

Research output: Contribution to journalArticle

Polyakov, AY, Lee, IH, Smirnov, NB, Yakimov, EB, Shchemerov, IV, Chernykh, AV, Kochkova, AI, Vasilev, AA, Carey, PH, Ren, F, Smith, D & Pearton, SJ 2019, 'Defects at the surface of β -Ga2O3 produced by Ar plasma exposure', APL Materials, vol. 7, no. 6, 061102. https://doi.org/10.1063/1.5109025
Polyakov AY, Lee IH, Smirnov NB, Yakimov EB, Shchemerov IV, Chernykh AV et al. Defects at the surface of β -Ga2O3 produced by Ar plasma exposure. APL Materials. 2019 Jun 1;7(6). 061102. https://doi.org/10.1063/1.5109025
Polyakov, A. Y. ; Lee, In Hwan ; Smirnov, N. B. ; Yakimov, E. B. ; Shchemerov, I. V. ; Chernykh, A. V. ; Kochkova, A. I. ; Vasilev, A. A. ; Carey, P. H. ; Ren, F. ; Smith, David ; Pearton, S. J. / Defects at the surface of β -Ga2O3 produced by Ar plasma exposure. In: APL Materials. 2019 ; Vol. 7, No. 6.
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AU - Shchemerov, I. V.

AU - Chernykh, A. V.

AU - Kochkova, A. I.

AU - Vasilev, A. A.

AU - Carey, P. H.

AU - Ren, F.

AU - Smith, David

AU - Pearton, S. J.

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AB - Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V to -0.02 V due to the buildup of deep trap concentration in the near surface region. Deep level spectra measurements indicate a strong increase in the top ∼200 nm of the plasma treated layer of the concentration of E2∗ (Ec - 0.8 eV) and especially E3 (Ec - 1.05 eV) deep electron traps. Capacitance-voltage profiling with monochromatic illumination also indicated a large increase in the upper ∼100 nm of the film in the concentration of deep acceptors with optical threshold for an ionization of ∼2.3 eV and 3.1 eV. Such defects at the surface led to a significant increase in reverse current, an increase in the ideality factor in forward current, and a dramatic decrease in the diffusion length of nonequilibrium charge carriers from 450 nm to 150 nm.

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