Defects and interfaces in GaN epitaxy

Research output: Contribution to journalArticle

165 Scopus citations
Original languageEnglish (US)
Pages (from-to)51-57
Number of pages7
JournalMRS Bulletin
Volume22
Issue number2
DOIs
StatePublished - Feb 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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