Defect states in red-emitting InxAl1-xAs quantum dots

R. Leon; J. Ibáñez; S. Marcinkevičius; J. Siegert; T. Paskova; B. Monemar; S. Chaparro; C. Navarro; Shane Johnson; Yong-Hang Zhang

doi:10.1103/PhysRevB.66.085331

Defect states in red-emitting In_xAl_1-xAs quantum dots

R. Leon, J. Ibáñez, S. Marcinkevičius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Optical and transport measurements carried out in pn diodes and Schottky barriers containing multilayers of InAlAs quantum dots embedded in AlGaAs barriers show that while red emission from quantum dot (QD) states is obtained at ∼1.8 eV, defect states dominate the optical properties and transport in these quantum dots. These defects provide nonradiative recombination paths, which shortens the carrier lifetimes in QD's to tens of picoseconds (from ∼1 ns) and produce deep level transient spectroscopy (DLTS) peaks in both p and n type structures. DLTS experiments performed with short filling pulses and bias dependent measurements on InAlAs QD's on n-AlGaAs barriers showed that one of the peaks can be attributed to either. QD/barrier interfacial defects or QD electron levels, while other peaks are attributed to defect states in both p and n type structures.

Original language	English (US)
Article number	085331
Pages (from-to)	853311-853317
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.66.085331
State	Published - Aug 15 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.66.085331

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title = "Defect states in red-emitting InxAl1-xAs quantum dots",

abstract = "Optical and transport measurements carried out in pn diodes and Schottky barriers containing multilayers of InAlAs quantum dots embedded in AlGaAs barriers show that while red emission from quantum dot (QD) states is obtained at ∼1.8 eV, defect states dominate the optical properties and transport in these quantum dots. These defects provide nonradiative recombination paths, which shortens the carrier lifetimes in QD's to tens of picoseconds (from ∼1 ns) and produce deep level transient spectroscopy (DLTS) peaks in both p and n type structures. DLTS experiments performed with short filling pulses and bias dependent measurements on InAlAs QD's on n-AlGaAs barriers showed that one of the peaks can be attributed to either. QD/barrier interfacial defects or QD electron levels, while other peaks are attributed to defect states in both p and n type structures.",

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AU - Leon, R.

AU - Ibáñez, J.

AU - Marcinkevičius, S.

AU - Siegert, J.

AU - Paskova, T.

AU - Monemar, B.

AU - Chaparro, S.

AU - Navarro, C.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2002/8/15

Y1 - 2002/8/15

N2 - Optical and transport measurements carried out in pn diodes and Schottky barriers containing multilayers of InAlAs quantum dots embedded in AlGaAs barriers show that while red emission from quantum dot (QD) states is obtained at ∼1.8 eV, defect states dominate the optical properties and transport in these quantum dots. These defects provide nonradiative recombination paths, which shortens the carrier lifetimes in QD's to tens of picoseconds (from ∼1 ns) and produce deep level transient spectroscopy (DLTS) peaks in both p and n type structures. DLTS experiments performed with short filling pulses and bias dependent measurements on InAlAs QD's on n-AlGaAs barriers showed that one of the peaks can be attributed to either. QD/barrier interfacial defects or QD electron levels, while other peaks are attributed to defect states in both p and n type structures.

AB - Optical and transport measurements carried out in pn diodes and Schottky barriers containing multilayers of InAlAs quantum dots embedded in AlGaAs barriers show that while red emission from quantum dot (QD) states is obtained at ∼1.8 eV, defect states dominate the optical properties and transport in these quantum dots. These defects provide nonradiative recombination paths, which shortens the carrier lifetimes in QD's to tens of picoseconds (from ∼1 ns) and produce deep level transient spectroscopy (DLTS) peaks in both p and n type structures. DLTS experiments performed with short filling pulses and bias dependent measurements on InAlAs QD's on n-AlGaAs barriers showed that one of the peaks can be attributed to either. QD/barrier interfacial defects or QD electron levels, while other peaks are attributed to defect states in both p and n type structures.

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Defect states in red-emitting In_xAl_1-xAs quantum dots

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