TY - JOUR
T1 - Defect Parameters Contour Mapping
T2 - A Powerful Tool for Lifetime Spectroscopy Data Analysis
AU - Bernardini, Simone
AU - Naerland, Tine U.
AU - Coletti, Gianluca
AU - Bertoni, Mariana
N1 - Funding Information:
The authors would like to thank Mr. Sun and Dr. Paudyal for sharing the original data referenced in Sun et al. and Paudyal et al., respectively, for the analysis presented herein. This material is based upon work supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/8
Y1 - 2018/8
N2 - Temperature- and injection-dependent lifetime spectroscopy (TIDLS) is extensively used for the characterization of defects in silicon material for photovoltaic applications. By coupling TIDLS measurements with Shockley–Read–Hall recombination models, the most important defects’ parameters can be assessed including the defect energy level Et and the capture cross section ratio k. However, while proving extremely helpful in a variety of studies aiming at the characterization of contaminated silicon, a generalized approach for the analysis of industrially-relevant material has not yet emerged. In this contribution, we examine in detail the recently introduced defect parameters contour mapping (DPCM) methodology for TIDLS data analysis as a tool for direct visualization of possible lifetime limiting defects. Herein, we showcase the DPCM method's potential by applying it to two representative case studies selected from literature and we demonstrate that, even when data are scarce, invaluable information is obtained in an easy and intuitive way without any a priori assumption needed. We then apply the DPCM method to simulated TIDLS data to evaluate the general characteristics of its response and the optimal conditions for its application. This analysis proves that the temperature dependence of lifetime is the most critical information required toward a really univocal identification of metal impurities.
AB - Temperature- and injection-dependent lifetime spectroscopy (TIDLS) is extensively used for the characterization of defects in silicon material for photovoltaic applications. By coupling TIDLS measurements with Shockley–Read–Hall recombination models, the most important defects’ parameters can be assessed including the defect energy level Et and the capture cross section ratio k. However, while proving extremely helpful in a variety of studies aiming at the characterization of contaminated silicon, a generalized approach for the analysis of industrially-relevant material has not yet emerged. In this contribution, we examine in detail the recently introduced defect parameters contour mapping (DPCM) methodology for TIDLS data analysis as a tool for direct visualization of possible lifetime limiting defects. Herein, we showcase the DPCM method's potential by applying it to two representative case studies selected from literature and we demonstrate that, even when data are scarce, invaluable information is obtained in an easy and intuitive way without any a priori assumption needed. We then apply the DPCM method to simulated TIDLS data to evaluate the general characteristics of its response and the optimal conditions for its application. This analysis proves that the temperature dependence of lifetime is the most critical information required toward a really univocal identification of metal impurities.
KW - defect parameters contour mapping (DPCM)
KW - defects
KW - lifetime spectroscopy
KW - semiconductors
KW - solar cells
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U2 - 10.1002/pssb.201800082
DO - 10.1002/pssb.201800082
M3 - Article
AN - SCOPUS:85051439619
SN - 0370-1972
VL - 255
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 8
M1 - 1800082
ER -