Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material

J. D. Lee; J. C. Park; D. Venables; Stephen Krause; P. Roitman

Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material

J. D. Lee, J. C. Park, D. Venables, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

Original language	English (US)
Title of host publication	Materials Synthesis and Processing Using Ion Beams
Editors	Anthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Publisher	Publ by Materials Research Society
Pages	753-758
Number of pages	6
ISBN (Print)	1558992154
State	Published - 1994
Event	Proceedings of the MRS 1993 Fall Meeting - Boston, MA, USA Duration: Nov 29 1993 → Dec 3 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	316
ISSN (Print)	0272-9172

Other

Other	Proceedings of the MRS 1993 Fall Meeting
City	Boston, MA, USA
Period	11/29/93 → 12/3/93

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Lee, J. D., Park, J. C., Venables, D., Krause, S., & Roitman, P. (1994). Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material. In A. F. Garito, A. K.-Y. Jen, C. Y.-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 753-758). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.

Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material. / Lee, J. D.; Park, J. C.; Venables, D. et al.
Materials Synthesis and Processing Using Ion Beams. ed. / Anthony F. Garito; Alex K-Y. Jen; Charles Y-C. Lee; Larry R. Dalton. Publ by Materials Research Society, 1994. p. 753-758 (Materials Research Society Symposium Proceedings; Vol. 316).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, JD, Park, JC, Venables, D, Krause, S & Roitman, P 1994, Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material. in AF Garito, AK-Y Jen, CY-C Lee & LR Dalton (eds), Materials Synthesis and Processing Using Ion Beams. Materials Research Society Symposium Proceedings, vol. 316, Publ by Materials Research Society, pp. 753-758, Proceedings of the MRS 1993 Fall Meeting, Boston, MA, USA, 11/29/93.

Lee JD, Park JC, Venables D, Krause S, Roitman P. Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material. In Garito AF, Jen AKY, Lee CYC, Dalton LR, editors, Materials Synthesis and Processing Using Ion Beams. Publ by Materials Research Society. 1994. p. 753-758. (Materials Research Society Symposium Proceedings).

Lee, J. D. ; Park, J. C. ; Venables, D. et al. / Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material. Materials Synthesis and Processing Using Ion Beams. editor / Anthony F. Garito ; Alex K-Y. Jen ; Charles Y-C. Lee ; Larry R. Dalton. Publ by Materials Research Society, 1994. pp. 753-758 (Materials Research Society Symposium Proceedings).

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title = "Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material",

abstract = "Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.",

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T1 - Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material

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N2 - Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

AB - Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

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Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material

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