Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material

J. D. Lee, J. C. Park, D. Venables, Stephen Krause, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages753-758
Number of pages6
Volume316
ISBN (Print)1558992154
Publication statusPublished - 1994
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Other

OtherProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period11/29/9312/3/93

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, J. D., Park, J. C., Venables, D., Krause, S., & Roitman, P. (1994). Defect pair formation by implantation-induced stresses in high-dose oxygen implanted silicon-on-insulator material. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Research Society Symposium Proceedings (Vol. 316, pp. 753-758). Pittsburgh, PA, United States: Publ by Materials Research Society.