Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

R. L. Thornton, D. P. Bour, D. Treat, Fernando Ponce, J. C. Tramontana, F. J. Endicott

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Abstract

We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion process. Transmission electron microscopy analysis of diffused buried layers of varying thickness exhibits very good qualitative agreement with the analysis developed.

Original languageEnglish (US)
Pages (from-to)2696-2698
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number21
DOIs
StatePublished - 1994
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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