We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion process. Transmission electron microscopy analysis of diffused buried layers of varying thickness exhibits very good qualitative agreement with the analysis developed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)