Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

R. L. Thornton; D. P. Bour; D. Treat; F. A. Ponce; J. C. Tramontana; F. J. Endicott

doi:10.1063/1.112609

Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

R. L. Thornton, D. P. Bour, D. Treat, F. A. Ponce, J. C. Tramontana, F. J. Endicott

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion process. Transmission electron microscopy analysis of diffused buried layers of varying thickness exhibits very good qualitative agreement with the analysis developed.

Original language	English (US)
Pages (from-to)	2696-2698
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	21
DOIs	https://doi.org/10.1063/1.112609
State	Published - Dec 1 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers",

abstract = "We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion process. Transmission electron microscopy analysis of diffused buried layers of varying thickness exhibits very good qualitative agreement with the analysis developed.",

author = "Thornton, {R. L.} and Bour, {D. P.} and D. Treat and Ponce, {F. A.} and Tramontana, {J. C.} and Endicott, {F. J.}",

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AU - Thornton, R. L.

AU - Bour, D. P.

AU - Treat, D.

AU - Ponce, F. A.

AU - Tramontana, J. C.

AU - Endicott, F. J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion process. Transmission electron microscopy analysis of diffused buried layers of varying thickness exhibits very good qualitative agreement with the analysis developed.

AB - We have investigated both analytically and experimentally the mechanisms for defect formation during interdiffusion of GaAs and GaInP. We find that the analytical model predicts a critical thickness below which defects are not produced during this highly strained interdiffusion process. Transmission electron microscopy analysis of diffused buried layers of varying thickness exhibits very good qualitative agreement with the analysis developed.

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Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

Abstract

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