Defect formation near GaN surfaces and interfaces

L. J. Brillson, T. M. Levin, G. H. Jessen, A. P. Young, C. Tu, Y. Naoi, Fernando Ponce, Y. Yang, G. J. Lapeyre, J. D. MacKenzie, C. R. Abernathy

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well interfaces. Employing energies as low as 100 eV and ranging up to 5 keV, we have been able to establish the local nature of these states and their spatial variation normal to the interface plane on an incremental 10-20 nm scale. Coupled with surface science techniques, these measurements show that a variety of discrete deep levels form deep within the GaN band gap due to (a) native defects, (b) metal-induced bonding, (c) reaction products, and (d), in the case of GaN/InGaN heterostructures, local interface phase changes. These results suggest that deep levels are a common feature at GaN interfaces and hence can play an integral role in charge transfer and the formation of local dipoles at GaN heterostructures.

Original languageEnglish (US)
Pages (from-to)70-74
Number of pages5
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
StatePublished - Dec 15 1999

Fingerprint

Defects
Heterojunctions
defects
Metals
Phase interfaces
Ultrahigh vacuum
Reaction products
Semiconductor quantum wells
Charge transfer
Luminescence
Energy gap
Spectroscopy
reaction products
ultrahigh vacuum
metal surfaces
Electrons
charge transfer
quantum wells
electron energy
luminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Brillson, L. J., Levin, T. M., Jessen, G. H., Young, A. P., Tu, C., Naoi, Y., ... Abernathy, C. R. (1999). Defect formation near GaN surfaces and interfaces. Physica B: Condensed Matter, 273-274, 70-74. https://doi.org/10.1016/S0921-4526(99)00409-3

Defect formation near GaN surfaces and interfaces. / Brillson, L. J.; Levin, T. M.; Jessen, G. H.; Young, A. P.; Tu, C.; Naoi, Y.; Ponce, Fernando; Yang, Y.; Lapeyre, G. J.; MacKenzie, J. D.; Abernathy, C. R.

In: Physica B: Condensed Matter, Vol. 273-274, 15.12.1999, p. 70-74.

Research output: Contribution to journalArticle

Brillson, LJ, Levin, TM, Jessen, GH, Young, AP, Tu, C, Naoi, Y, Ponce, F, Yang, Y, Lapeyre, GJ, MacKenzie, JD & Abernathy, CR 1999, 'Defect formation near GaN surfaces and interfaces', Physica B: Condensed Matter, vol. 273-274, pp. 70-74. https://doi.org/10.1016/S0921-4526(99)00409-3
Brillson LJ, Levin TM, Jessen GH, Young AP, Tu C, Naoi Y et al. Defect formation near GaN surfaces and interfaces. Physica B: Condensed Matter. 1999 Dec 15;273-274:70-74. https://doi.org/10.1016/S0921-4526(99)00409-3
Brillson, L. J. ; Levin, T. M. ; Jessen, G. H. ; Young, A. P. ; Tu, C. ; Naoi, Y. ; Ponce, Fernando ; Yang, Y. ; Lapeyre, G. J. ; MacKenzie, J. D. ; Abernathy, C. R. / Defect formation near GaN surfaces and interfaces. In: Physica B: Condensed Matter. 1999 ; Vol. 273-274. pp. 70-74.
@article{6700678cd1ee4f2b83f8ba6a8452cb4b,
title = "Defect formation near GaN surfaces and interfaces",
abstract = "We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well interfaces. Employing energies as low as 100 eV and ranging up to 5 keV, we have been able to establish the local nature of these states and their spatial variation normal to the interface plane on an incremental 10-20 nm scale. Coupled with surface science techniques, these measurements show that a variety of discrete deep levels form deep within the GaN band gap due to (a) native defects, (b) metal-induced bonding, (c) reaction products, and (d), in the case of GaN/InGaN heterostructures, local interface phase changes. These results suggest that deep levels are a common feature at GaN interfaces and hence can play an integral role in charge transfer and the formation of local dipoles at GaN heterostructures.",
author = "Brillson, {L. J.} and Levin, {T. M.} and Jessen, {G. H.} and Young, {A. P.} and C. Tu and Y. Naoi and Fernando Ponce and Y. Yang and Lapeyre, {G. J.} and MacKenzie, {J. D.} and Abernathy, {C. R.}",
year = "1999",
month = "12",
day = "15",
doi = "10.1016/S0921-4526(99)00409-3",
language = "English (US)",
volume = "273-274",
pages = "70--74",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

TY - JOUR

T1 - Defect formation near GaN surfaces and interfaces

AU - Brillson, L. J.

AU - Levin, T. M.

AU - Jessen, G. H.

AU - Young, A. P.

AU - Tu, C.

AU - Naoi, Y.

AU - Ponce, Fernando

AU - Yang, Y.

AU - Lapeyre, G. J.

AU - MacKenzie, J. D.

AU - Abernathy, C. R.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well interfaces. Employing energies as low as 100 eV and ranging up to 5 keV, we have been able to establish the local nature of these states and their spatial variation normal to the interface plane on an incremental 10-20 nm scale. Coupled with surface science techniques, these measurements show that a variety of discrete deep levels form deep within the GaN band gap due to (a) native defects, (b) metal-induced bonding, (c) reaction products, and (d), in the case of GaN/InGaN heterostructures, local interface phase changes. These results suggest that deep levels are a common feature at GaN interfaces and hence can play an integral role in charge transfer and the formation of local dipoles at GaN heterostructures.

AB - We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well interfaces. Employing energies as low as 100 eV and ranging up to 5 keV, we have been able to establish the local nature of these states and their spatial variation normal to the interface plane on an incremental 10-20 nm scale. Coupled with surface science techniques, these measurements show that a variety of discrete deep levels form deep within the GaN band gap due to (a) native defects, (b) metal-induced bonding, (c) reaction products, and (d), in the case of GaN/InGaN heterostructures, local interface phase changes. These results suggest that deep levels are a common feature at GaN interfaces and hence can play an integral role in charge transfer and the formation of local dipoles at GaN heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=0033314702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033314702&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00409-3

DO - 10.1016/S0921-4526(99)00409-3

M3 - Article

AN - SCOPUS:0033314702

VL - 273-274

SP - 70

EP - 74

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -