TY - JOUR
T1 - Defect formation near GaN surfaces and interfaces
AU - Brillson, L. J.
AU - Levin, T. M.
AU - Jessen, G. H.
AU - Young, A. P.
AU - Tu, C.
AU - Naoi, Y.
AU - Ponce, Fernando
AU - Yang, Y.
AU - Lapeyre, G. J.
AU - MacKenzie, J. D.
AU - Abernathy, C. R.
N1 - Funding Information:
This work was supported in part by US Department of Energy grant DE-FG0297ER45666 (Craig Hartley) (LEEN experiments) and in part by NSF grant DMR-9711851 (LaVerne Hess) (depth calculations).
PY - 1999/12/15
Y1 - 1999/12/15
N2 - We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well interfaces. Employing energies as low as 100 eV and ranging up to 5 keV, we have been able to establish the local nature of these states and their spatial variation normal to the interface plane on an incremental 10-20 nm scale. Coupled with surface science techniques, these measurements show that a variety of discrete deep levels form deep within the GaN band gap due to (a) native defects, (b) metal-induced bonding, (c) reaction products, and (d), in the case of GaN/InGaN heterostructures, local interface phase changes. These results suggest that deep levels are a common feature at GaN interfaces and hence can play an integral role in charge transfer and the formation of local dipoles at GaN heterostructures.
AB - We have used low-energy electron-excited nanoscale-luminescence (LEEN) spectroscopy combined with ultrahigh vacuum (UHV) surface science techniques to probe deep level defect states at GaN free surfaces, metal-GaN contacts and GaN/InGaN quantum well interfaces. Employing energies as low as 100 eV and ranging up to 5 keV, we have been able to establish the local nature of these states and their spatial variation normal to the interface plane on an incremental 10-20 nm scale. Coupled with surface science techniques, these measurements show that a variety of discrete deep levels form deep within the GaN band gap due to (a) native defects, (b) metal-induced bonding, (c) reaction products, and (d), in the case of GaN/InGaN heterostructures, local interface phase changes. These results suggest that deep levels are a common feature at GaN interfaces and hence can play an integral role in charge transfer and the formation of local dipoles at GaN heterostructures.
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U2 - 10.1016/S0921-4526(99)00409-3
DO - 10.1016/S0921-4526(99)00409-3
M3 - Conference article
AN - SCOPUS:0033314702
SN - 0921-4526
VL - 273-274
SP - 70
EP - 74
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)
Y2 - 26 July 1999 through 30 July 1999
ER -