Defect engineering of p-type silicon heterojunction solar cells fabricated using commercial-grade low-lifetime silicon wafers

Daniel Chen, Moonyong Kim, Jianwei Shi, Bruno Vicari Stefani, Zhengshan Yu, Shaoyang Liu, Roland Einhaus, Stuart Wenham, Zachary Holman, Brett Hallam

Research output: Contribution to journalArticle


In this work, we integrate defect engineering methods of gettering and hydrogenation into silicon heterojunction solar cells fabricated using low-lifetime commercial-grade p-type Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We independently assess the impact of gettering on the removal of bulk impurities such as iron as well as the impact of hydrogenation on the passivation of grain boundaries and B-O defects. Furthermore, we report for the first time the susceptibility of heterojunction devices to light- and elevated temperature–induced degradation and investigate the onset of such degradation during device fabrication. Lastly, we demonstrate solar cells with independently verified 1-sun open-circuit voltages of 707 and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, with a starting bulk minority-carrier lifetime below 40 microseconds. These remarkably high open-circuit voltages reveal the potential of inexpensive low-lifetime p-type silicon wafers for making devices with efficiencies without needing to shift towards n-type substrates.

Original languageEnglish (US)
JournalProgress in Photovoltaics: Research and Applications
StateAccepted/In press - Jan 1 2019



  • LeTID
  • boron-oxygen defect
  • gettering
  • hydrogenation
  • p-type
  • silicon heterojunction solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this