Abstract

The formation of crystalline defects is studied as a function of the epitaxial layer thickness in InGaAs and GaAsSb material systems grown by molecular beam epitaxy on (001) GaAs wafers. The Sb and In composition is roughly 8% in both sets of samples while the nominal thicknesses are respectively 50, 125, 250nm and 500nm for the InGaAs structures and 100, 250 and 500nm for the GaAsSb structures. High-resolution x-ray diffraction results show that similar partial relaxation is obtained in both systems for nearly the same thickness. Consistent structural transformation of point defects into dislocation loops related to the thickness of ternary layers is revealed. This resulted in a partial relaxation of 42 and 46% in the 250 nm thick GaAsSb and InGaAs layers respectively due to a density of secondary 60° dislocation loops of ∼ 1 × 109 cm-2. The relaxation increased to 64% in the 500nm thick InGaAs and to 68% for the 500nm thick GaAsSb films even though the density of 60° dislocation loops in the volume was reduced due to intersections of these dislocation loops. Explanation of revealed structural features is suggested.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages499-504
Number of pages6
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Epitaxial layers
Point defects
Dislocations (crystals)
Thick films
Molecular beam epitaxy
Crystal lattices
Diffraction
Crystalline materials
X rays
Defects
Chemical analysis
gallium arsenide

Keywords

  • GaAsSb
  • InGaAs
  • multi-junction solar cells
  • reciprocal space maps
  • rocking curves
  • x-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Maros, A., Faleev, N., & Honsberg, C. (2014). Defect creation in low lattice-mismatched epitaxial structures. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 499-504). [6924969] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924969

Defect creation in low lattice-mismatched epitaxial structures. / Maros, Aymeric; Faleev, Nikolai; Honsberg, Christiana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 499-504 6924969.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maros, A, Faleev, N & Honsberg, C 2014, Defect creation in low lattice-mismatched epitaxial structures. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924969, Institute of Electrical and Electronics Engineers Inc., pp. 499-504, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6924969
Maros A, Faleev N, Honsberg C. Defect creation in low lattice-mismatched epitaxial structures. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 499-504. 6924969 https://doi.org/10.1109/PVSC.2014.6924969
Maros, Aymeric ; Faleev, Nikolai ; Honsberg, Christiana. / Defect creation in low lattice-mismatched epitaxial structures. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 499-504
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