Abstract

The optical properties of three sets of InGaAs/GaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy and previously characterized by x-ray diffraction for crystal perfection were investigated. The correlations between growth conditions, crystal defects, and optical properties are discussed. Evaluation of the relative importance of non-radiative Shockley-Read-Hall (SRH) recombination was carried out according to a method presented herein. The optimal deposition temperature was determined based on both proper carrier confinement in the nanostructures and the least non-radiative recombination. Growing below this temperature increased SRH-recombination whereas higher growth temperatures led to carrier localization in local band edge minima. Varying the MQW periodicity and MQW period allowed the study of their effects on the strength of SRH-recombination. MQW periodicity results are explained in the frame of a cumulative deterioration effect with continued epitaxial growth, while MQW period data shows correlations between relaxation of the initial elastic stress and SRH-strength. Limitations of the underlying model for SRH-analysis are pointed out.

Original languageEnglish (US)
Pages (from-to)49-53
Number of pages5
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - Jul 28 2015

Fingerprint

Semiconductor quantum wells
Optical properties
quantum wells
optical properties
Defects
defects
periodic variations
data correlation
Crystal defects
Growth temperature
deterioration
Epitaxial growth
Molecular beam epitaxy
crystal defects
temperature
Deterioration
Nanostructures
x ray diffraction
molecular beam epitaxy
Diffraction

Keywords

  • A1. Defects
  • A1. Nanostructures
  • A1. Photoluminescence spectroscopy
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Indium gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties. / Karow, Matthias M.; Faleev, Nikolai N.; Maros, Aymeric; Honsberg, Christiana.

In: Journal of Crystal Growth, Vol. 425, 28.07.2015, p. 49-53.

Research output: Contribution to journalArticle

Karow, Matthias M. ; Faleev, Nikolai N. ; Maros, Aymeric ; Honsberg, Christiana. / Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 49-53.
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