TY - JOUR
T1 - Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties
AU - Karow, Matthias M.
AU - Faleev, Nikolai N.
AU - Maros, Aymeric
AU - Honsberg, Christiana
N1 - Funding Information:
This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895 . Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect those of NSF or DOE. The authors give special thanks to the research group of Prof. Dr. Angela Rizzi, Göttingen University, Germany and the OSRAM OS Company, Regensburg, Germany for technical support, as well as to Dr. Cun-Zheng Ning, Nanophotonics Laboratory, Arizona State University for fruitful discussions.
Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - The optical properties of three sets of InGaAs/GaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy and previously characterized by x-ray diffraction for crystal perfection were investigated. The correlations between growth conditions, crystal defects, and optical properties are discussed. Evaluation of the relative importance of non-radiative Shockley-Read-Hall (SRH) recombination was carried out according to a method presented herein. The optimal deposition temperature was determined based on both proper carrier confinement in the nanostructures and the least non-radiative recombination. Growing below this temperature increased SRH-recombination whereas higher growth temperatures led to carrier localization in local band edge minima. Varying the MQW periodicity and MQW period allowed the study of their effects on the strength of SRH-recombination. MQW periodicity results are explained in the frame of a cumulative deterioration effect with continued epitaxial growth, while MQW period data shows correlations between relaxation of the initial elastic stress and SRH-strength. Limitations of the underlying model for SRH-analysis are pointed out.
AB - The optical properties of three sets of InGaAs/GaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy and previously characterized by x-ray diffraction for crystal perfection were investigated. The correlations between growth conditions, crystal defects, and optical properties are discussed. Evaluation of the relative importance of non-radiative Shockley-Read-Hall (SRH) recombination was carried out according to a method presented herein. The optimal deposition temperature was determined based on both proper carrier confinement in the nanostructures and the least non-radiative recombination. Growing below this temperature increased SRH-recombination whereas higher growth temperatures led to carrier localization in local band edge minima. Varying the MQW periodicity and MQW period allowed the study of their effects on the strength of SRH-recombination. MQW periodicity results are explained in the frame of a cumulative deterioration effect with continued epitaxial growth, while MQW period data shows correlations between relaxation of the initial elastic stress and SRH-strength. Limitations of the underlying model for SRH-analysis are pointed out.
KW - A1. Defects
KW - A1. Nanostructures
KW - A1. Photoluminescence spectroscopy
KW - A3. Molecular beam epitaxy
KW - A3. Superlattices
KW - B2. Indium gallium arsenide
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U2 - 10.1016/j.jcrysgro.2015.03.048
DO - 10.1016/j.jcrysgro.2015.03.048
M3 - Article
AN - SCOPUS:84937922386
SN - 0022-0248
VL - 425
SP - 49
EP - 53
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -