Abstract

We present a systematic study of extended defect creation in InGaAs/GaAs multiple quantum well (MQW) structures. Three sets of samples, grown by molecular beam epitaxy, were characterized by high-resolution x-ray diffraction and transmission electron microscopy. First, in a temperature series, optimal deposition temperature of 505 °C was found for the In composition of 20% as determined from dislocation loop (DL) density and inspection of diffuse scattering patterns. InGaAs decomposition and lateral layer thickness undulations were observed above this optimal temperature. Second, increase of MQW periodicity from ×5 to ×10 revealed a thickness-related cumulative deterioration, characterized by increased likelihood of defect intersection with continued MQW growth, as suggested by an increase of the secondary DL density from ∼1.6×10<sup>7</sup> cm<sup>-2</sup> to ∼6×10<sup>8</sup> cm<sup>-2</sup>. Additional strained layers experienced an ever-degrading quality of the growth surface. Third, a set consisting of samples with three different MQW periods was investigated. Different stages, suggested by a model of defect creation, were obtained for these different MQW periods, allowing specification of particular type, density, and spatial distribution of extended defects for each stage of defect creation.

Original languageEnglish (US)
Pages (from-to)43-48
Number of pages6
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - Jul 28 2015

Fingerprint

Semiconductor quantum wells
Structural properties
quantum wells
Defects
defects
deterioration
Molecular beam epitaxy
Temperature
intersections
Spatial distribution
temperature
Deterioration
density distribution
specifications
periodic variations
inspection
spatial distribution
x ray diffraction
molecular beam epitaxy
Diffraction

Keywords

  • A1. Defects
  • A1. High resolution x-ray diffraction
  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Indium gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Defect creation in InGaAs/GaAs multiple quantum wells-I. Structural properties. / Karow, Matthias M.; Faleev, Nikolai N.; Smith, David; Honsberg, Christiana.

In: Journal of Crystal Growth, Vol. 425, 28.07.2015, p. 43-48.

Research output: Contribution to journalArticle

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