Defect-based compact model for circuit reliability simulation in advanced CMOS technologies

I. S. Esqueda, Hugh Barnaby

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

A defect-based compact modeling approach for circuit reliability simulation based on surface potential calculations is presented. The modeling approach captures the bias-dependence of stress-induced defects such as (bulk) oxide-trapped charge and interface traps that cannot be described by typical fixed voltage shift models (i.e., threshold voltage, Vth-based models). The defect dynamic charge contribution is modeled under non-equilibrium conditions and for all regions of operation (i.e. from weak to strong inversion) and not just at the threshold (as in Vth-based models). The modeled is verified with 2-D TCAD simulations that incorporate oxide trapped charge and interface trap densities. Spice-level simulations of ring oscillators and SRAM cells reveal inaccuracies in describing aging effects when utilizing typical fixed voltage shift models as compared to the presented defect-based compact modeling approach.

Original languageEnglish (US)
Title of host publication2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-49
Number of pages5
ISBN (Print)9781479903504
DOIs
StatePublished - Jan 1 2013
Event2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 - South Lake Tahoe, CA, United States
Duration: Oct 13 2013Oct 17 2013

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013
Country/TerritoryUnited States
CitySouth Lake Tahoe, CA
Period10/13/1310/17/13

Keywords

  • CMOS
  • Interface traps
  • NBTI
  • SRAM
  • aging
  • circuit simulation
  • reliability
  • ring oscillator
  • stress
  • surface potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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