Defect annihilation in AIN thin films by ultrahigh temperature processing

Z. Y. Fan, G. Rong, Nathan Newman, David Smith

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Postgrowth thermal processing in the range of 1200-1400°C is shown to improve markedly the quality of thin (∼200 nm) AlN films grown by molecular beam epitaxy on SiC substrates. Comparison of both on-axis (0002) and off-axis (101̄2) x-ray diffraction peaks documents this improvement. Cross-sectional transmission electron micrographs confirm the reduction in dislocations and grain boundaries, while plan-view micrographs demonstrate that threading defect densities can be reduced to ∼3×108/cm2 after annealing. The thermal treatment is particularly effective because of the unusually large temperature window between the onset of a near-zero reactant sticking coefficient at ∼1200°C and AlN thermal decomposition at ∼1400°C. The Al sticking coefficient and the AlN decomposition rate are also reported.

Original languageEnglish (US)
Pages (from-to)1839-1841
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number14
StatePublished - Apr 3 2000

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defects
coefficients
thin films
thermal decomposition
x ray diffraction
molecular beam epitaxy
grain boundaries
decomposition
annealing
temperature
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Defect annihilation in AIN thin films by ultrahigh temperature processing. / Fan, Z. Y.; Rong, G.; Newman, Nathan; Smith, David.

In: Applied Physics Letters, Vol. 76, No. 14, 03.04.2000, p. 1839-1841.

Research output: Contribution to journalArticle

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