Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, Fernando Ponce, S. Sahonta, D. Cherns

Research output: Contribution to journalArticle

Abstract

Control of defect and strain in AlGaN layer and the performance of the UV devices were discussed. It was shown that the crystalline quality is significantly improved when an AlGaN layer is grown on a high-quality GaN layer. It was found that a combination of low temperature interlayer and heteroepitaxial lateral overgrowth are effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV light emitting diodes (LED). Even after fabricating on the low dislocation density, performance of the UV LED was found to be far behind that of visible nitride-LED.

Original languageEnglish (US)
Pages (from-to)2679-2685
Number of pages7
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
StatePublished - Sep 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Amano, H., Miyazaki, A., Iida, K., Kawashima, T., Iwaya, M., Kamiyama, S., Akasaki, I., Liu, R., Bell, A., Ponce, F., Sahonta, S., & Cherns, D. (2004). Defect and stress control of AlGaN for fabrication of high performance UV light emitters. Physica Status Solidi (A) Applied Research, 201(12), 2679-2685. https://doi.org/10.1002/pssa.200405044