Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano; A. Miyazaki; K. Iida; T. Kawashima; M. Iwaya; S. Kamiyama; I. Akasaki; R. Liu; A. Bell; Fernando Ponce; S. Sahonta; D. Cherns

doi:10.1002/pssa.200405044

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, Fernando Ponce, S. Sahonta, D. Cherns

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Control of defect and strain in AlGaN layer and the performance of the UV devices were discussed. It was shown that the crystalline quality is significantly improved when an AlGaN layer is grown on a high-quality GaN layer. It was found that a combination of low temperature interlayer and heteroepitaxial lateral overgrowth are effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV light emitting diodes (LED). Even after fabricating on the low dislocation density, performance of the UV LED was found to be far behind that of visible nitride-LED.

Original language	English (US)
Pages (from-to)	2679-2685
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	201
Issue number	12
DOIs	https://doi.org/10.1002/pssa.200405044
State	Published - Sep 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials

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abstract = "Control of defect and strain in AlGaN layer and the performance of the UV devices were discussed. It was shown that the crystalline quality is significantly improved when an AlGaN layer is grown on a high-quality GaN layer. It was found that a combination of low temperature interlayer and heteroepitaxial lateral overgrowth are effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV light emitting diodes (LED). Even after fabricating on the low dislocation density, performance of the UV LED was found to be far behind that of visible nitride-LED.",

author = "H. Amano and A. Miyazaki and K. Iida and T. Kawashima and M. Iwaya and S. Kamiyama and I. Akasaki and R. Liu and A. Bell and Fernando Ponce and S. Sahonta and D. Cherns",

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T1 - Defect and stress control of AlGaN for fabrication of high performance UV light emitters

AU - Amano, H.

AU - Miyazaki, A.

AU - Iida, K.

AU - Kawashima, T.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Akasaki, I.

AU - Liu, R.

AU - Bell, A.

AU - Ponce, Fernando

AU - Sahonta, S.

AU - Cherns, D.

PY - 2004/9

Y1 - 2004/9

N2 - Control of defect and strain in AlGaN layer and the performance of the UV devices were discussed. It was shown that the crystalline quality is significantly improved when an AlGaN layer is grown on a high-quality GaN layer. It was found that a combination of low temperature interlayer and heteroepitaxial lateral overgrowth are effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV light emitting diodes (LED). Even after fabricating on the low dislocation density, performance of the UV LED was found to be far behind that of visible nitride-LED.

AB - Control of defect and strain in AlGaN layer and the performance of the UV devices were discussed. It was shown that the crystalline quality is significantly improved when an AlGaN layer is grown on a high-quality GaN layer. It was found that a combination of low temperature interlayer and heteroepitaxial lateral overgrowth are effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV light emitting diodes (LED). Even after fabricating on the low dislocation density, performance of the UV LED was found to be far behind that of visible nitride-LED.

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Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Abstract

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