Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano; A. Miyazaki; K. Iida; T. Kawashima; M. Iwaya; S. Kamiyama; I. Akasaki; R. Liu; A. Bell; Fernando Ponce; S. Sahonta; D. Cherns

doi:10.1002/pssa.200405044

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, Fernando Ponce, S. Sahonta, D. Cherns

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

29 Scopus citations

Abstract

Ultraviolet (UV) light emitting diode (LED) was fabricated on the low dislocation density AlGaN layers using GaN/AlGaN as the active layer. Critical issues with respect to the development of high-performance devices were discussed. A combination of low temperature interlayer and heteroepitaxial lateral overgrowth or facet controlled epitaxial lateral overgrowth were found to be effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV LED. UV laser diode (LD) was also fabricated on the low dislocation density AlGaN.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	2679-2685
Number of pages	7
Volume	1
Edition	10
DOIs	https://doi.org/10.1002/pssa.200405044
State	Published - 2004

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssa.200405044

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title = "Defect and stress control of AlGaN for fabrication of high performance UV light emitters",

abstract = "Ultraviolet (UV) light emitting diode (LED) was fabricated on the low dislocation density AlGaN layers using GaN/AlGaN as the active layer. Critical issues with respect to the development of high-performance devices were discussed. A combination of low temperature interlayer and heteroepitaxial lateral overgrowth or facet controlled epitaxial lateral overgrowth were found to be effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV LED. UV laser diode (LD) was also fabricated on the low dislocation density AlGaN.",

author = "H. Amano and A. Miyazaki and K. Iida and T. Kawashima and M. Iwaya and S. Kamiyama and I. Akasaki and R. Liu and A. Bell and Fernando Ponce and S. Sahonta and D. Cherns",

year = "2004",

doi = "10.1002/pssa.200405044",

language = "English (US)",

volume = "1",

pages = "2679--2685",

booktitle = "Physica Status Solidi C: Conferences",

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TY - GEN

T1 - Defect and stress control of AlGaN for fabrication of high performance UV light emitters

AU - Amano, H.

AU - Miyazaki, A.

AU - Iida, K.

AU - Kawashima, T.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Akasaki, I.

AU - Liu, R.

AU - Bell, A.

AU - Ponce, Fernando

AU - Sahonta, S.

AU - Cherns, D.

PY - 2004

Y1 - 2004

N2 - Ultraviolet (UV) light emitting diode (LED) was fabricated on the low dislocation density AlGaN layers using GaN/AlGaN as the active layer. Critical issues with respect to the development of high-performance devices were discussed. A combination of low temperature interlayer and heteroepitaxial lateral overgrowth or facet controlled epitaxial lateral overgrowth were found to be effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV LED. UV laser diode (LD) was also fabricated on the low dislocation density AlGaN.

AB - Ultraviolet (UV) light emitting diode (LED) was fabricated on the low dislocation density AlGaN layers using GaN/AlGaN as the active layer. Critical issues with respect to the development of high-performance devices were discussed. A combination of low temperature interlayer and heteroepitaxial lateral overgrowth or facet controlled epitaxial lateral overgrowth were found to be effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV LED. UV laser diode (LD) was also fabricated on the low dislocation density AlGaN.

UR - http://www.scopus.com/inward/record.url?scp=7244240752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=7244240752&partnerID=8YFLogxK

U2 - 10.1002/pssa.200405044

DO - 10.1002/pssa.200405044

M3 - Conference contribution

AN - SCOPUS:7244240752

VL - 1

SP - 2679

EP - 2685

BT - Physica Status Solidi C: Conferences

ER -

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Abstract

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