Ultraviolet (UV) light emitting diode (LED) was fabricated on the low dislocation density AlGaN layers using GaN/AlGaN as the active layer. Critical issues with respect to the development of high-performance devices were discussed. A combination of low temperature interlayer and heteroepitaxial lateral overgrowth or facet controlled epitaxial lateral overgrowth were found to be effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV LED. UV laser diode (LD) was also fabricated on the low dislocation density AlGaN.
|Original language||English (US)|
|Title of host publication||Physica Status Solidi C: Conferences|
|Number of pages||7|
|State||Published - 2004|
ASJC Scopus subject areas
- Condensed Matter Physics