Defect and stress control of AlGaN for fabrication of high performance UV light emitters

H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, Fernando Ponce, S. Sahonta, D. Cherns

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations

Abstract

Ultraviolet (UV) light emitting diode (LED) was fabricated on the low dislocation density AlGaN layers using GaN/AlGaN as the active layer. Critical issues with respect to the development of high-performance devices were discussed. A combination of low temperature interlayer and heteroepitaxial lateral overgrowth or facet controlled epitaxial lateral overgrowth were found to be effective to obtain crack-free and low dislocation density AlGaN, and thus achieving high-performance UV LED. UV laser diode (LD) was also fabricated on the low dislocation density AlGaN.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2679-2685
Number of pages7
Volume1
Edition10
DOIs
StatePublished - 2004

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Amano, H., Miyazaki, A., Iida, K., Kawashima, T., Iwaya, M., Kamiyama, S., Akasaki, I., Liu, R., Bell, A., Ponce, F., Sahonta, S., & Cherns, D. (2004). Defect and stress control of AlGaN for fabrication of high performance UV light emitters. In Physica Status Solidi C: Conferences (10 ed., Vol. 1, pp. 2679-2685) https://doi.org/10.1002/pssa.200405044