Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner; Tsung Ting Kao; Yuh Shiuan Liu; Xiao Hang Li; Md Mahbub Satter; Shyh Chiang Shen; P. Douglas Yoder; Jae Hyun Ryou; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando Ponce

doi:10.1063/1.4795719

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Tsung Ting Kao, Yuh Shiuan Liu, Xiao Hang Li, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Physics

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82 Scopus citations

Abstract

Deep-ultraviolet lasing was achieved at 243.5 nm from an Al _xGa_1-xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm² with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

Original language	English (US)
Article number	101110
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795719
State	Published - Mar 11 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4795719

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@article{148d38f63182427cade56ade38f46c6b,

title = "Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate",

abstract = "Deep-ultraviolet lasing was achieved at 243.5 nm from an Al xGa1-xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.",

author = "Zachary Lochner and Kao, {Tsung Ting} and Liu, {Yuh Shiuan} and Li, {Xiao Hang} and {Mahbub Satter}, Md and Shen, {Shyh Chiang} and {Douglas Yoder}, P. and Ryou, {Jae Hyun} and Dupuis, {Russell D.} and Yong Wei and Hongen Xie and Alec Fischer and Fernando Ponce",

note = "Funding Information: This work was supported by the Defence Advanced Research Projects Agency under Contract No. FA2386-10-1-4152. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.",

year = "2013",

month = mar,

day = "11",

doi = "10.1063/1.4795719",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

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TY - JOUR

T1 - Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

AU - Lochner, Zachary

AU - Kao, Tsung Ting

AU - Liu, Yuh Shiuan

AU - Li, Xiao Hang

AU - Mahbub Satter, Md

AU - Shen, Shyh Chiang

AU - Douglas Yoder, P.

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando

N1 - Funding Information: This work was supported by the Defence Advanced Research Projects Agency under Contract No. FA2386-10-1-4152. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Deep-ultraviolet lasing was achieved at 243.5 nm from an Al xGa1-xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

AB - Deep-ultraviolet lasing was achieved at 243.5 nm from an Al xGa1-xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 101110

ER -

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

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