Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Zachary Lochner, Tsung Ting Kao, Yuh Shiuan Liu, Xiao Hang Li, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Research output: Contribution to journalArticle

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Abstract

Deep-ultraviolet lasing was achieved at 243.5 nm from an Al xGa1-xN-based multi-quantum-well structure using a pulsed excimer laser for optical pumping. The threshold pump power density at room-temperature was 427 kW/cm2 with transverse electric (TE)-polarization-dominant emission. The structure was epitaxially grown by metalorganic chemical vapor deposition on an Al-polar free-standing AlN (0001) substrate. Stimulated emission is achieved by design of the active region, optimizing the growth, and the reduction in defect density afforded by homoepitaxial growth of AlN buffer layers on AlN substrates, demonstrating the feasibility of deep-ultraviolet diode lasers on free-standing AlN.

Original languageEnglish (US)
Article number101110
JournalApplied Physics Letters
Volume102
Issue number10
DOIs
StatePublished - Mar 11 2013

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lasing
optical pumping
stimulated emission
excimer lasers
metalorganic chemical vapor deposition
radiant flux density
pulsed lasers
buffers
semiconductor lasers
quantum wells
pumps
thresholds
defects
room temperature
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Mahbub Satter, M., Shen, S. C., ... Ponce, F. (2013). Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate. Applied Physics Letters, 102(10), [101110]. https://doi.org/10.1063/1.4795719

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate. / Lochner, Zachary; Kao, Tsung Ting; Liu, Yuh Shiuan; Li, Xiao Hang; Mahbub Satter, Md; Shen, Shyh Chiang; Douglas Yoder, P.; Ryou, Jae Hyun; Dupuis, Russell D.; Wei, Yong; Xie, Hongen; Fischer, Alec; Ponce, Fernando.

In: Applied Physics Letters, Vol. 102, No. 10, 101110, 11.03.2013.

Research output: Contribution to journalArticle

Lochner, Z, Kao, TT, Liu, YS, Li, XH, Mahbub Satter, M, Shen, SC, Douglas Yoder, P, Ryou, JH, Dupuis, RD, Wei, Y, Xie, H, Fischer, A & Ponce, F 2013, 'Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate', Applied Physics Letters, vol. 102, no. 10, 101110. https://doi.org/10.1063/1.4795719
Lochner, Zachary ; Kao, Tsung Ting ; Liu, Yuh Shiuan ; Li, Xiao Hang ; Mahbub Satter, Md ; Shen, Shyh Chiang ; Douglas Yoder, P. ; Ryou, Jae Hyun ; Dupuis, Russell D. ; Wei, Yong ; Xie, Hongen ; Fischer, Alec ; Ponce, Fernando. / Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate. In: Applied Physics Letters. 2013 ; Vol. 102, No. 10.
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