Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

A. Bhattacharyya, T. D. Moustakas, Lin Zhou, David Smith, W. Hug

Research output: Contribution to journalArticle

129 Scopus citations

Abstract

We report the development of Al0.7Ga0.3 N/AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm (III/V∼1) to 250 nm (III/V ≫ 1) with internal quantum efficiency varying from 5% to 50%, respectively. To account for these results, a growth model was proposed in which at III/V∼1 the growth proceeds via vapor phase epitaxy, while at III/V ≫ 1 the growth proceeds via liquid phase epitaxy.

Original languageEnglish (US)
Article number181907
JournalApplied Physics Letters
Volume94
Issue number18
DOIs
StatePublished - May 18 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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