DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES.

S. S. Chan, C. J. Varker, J. D. Whitfield, Ray Carpenter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

A dominant electron trap in boron-doped CZ silicon at E//c minus 0. 41 plus or minus 0. 02 ev with a electron capture cross section greater than 10** minus **1**4 cm**2 has been observed with DLTS in 2-step annealed (16 hrs at 800 degree C plus 16 hrs at 1050 degree C) seed end wafers where oxygen precipitation is pronounced. A strong correlation between the generation lifetime tau //g and the density of this trap is observed. Electron microscopy showed the dominant precipitates to be (100) plate type containing only Si and O, with dislocations and punched-out loops in close proximity. Wafers from the center- or tang-sections of the ingot or those given a 1-step anneal contain a low density ( less than 1. 2 multiplied by 10**1**2 cm** minus **3) of a hole trap at E//v plus 0. 25 ev not correlated with tau //g. These wafers contain precipitates with a different morphology with much lower or minimal dislocation densities. Possible origins of the lifetime controlling electron trap are discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsNoble M. Johnson, Stephen G. Bishop, George D. Watkins
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages281-286
Number of pages6
Volume46
ISBN (Print)0931837111
StatePublished - 1985
Externally publishedYes

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Electron traps
Carrier lifetime
Silicon
Precipitates
Oxygen
Hole traps
Deep level transient spectroscopy
Boron
Ingots
Electron microscopy
Seed
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chan, S. S., Varker, C. J., Whitfield, J. D., & Carpenter, R. (1985). DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES. In N. M. Johnson, S. G. Bishop, & G. D. Watkins (Eds.), Materials Research Society Symposia Proceedings (Vol. 46, pp. 281-286). Pittsburgh, PA, USA: Materials Research Soc.

DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES. / Chan, S. S.; Varker, C. J.; Whitfield, J. D.; Carpenter, Ray.

Materials Research Society Symposia Proceedings. ed. / Noble M. Johnson; Stephen G. Bishop; George D. Watkins. Vol. 46 Pittsburgh, PA, USA : Materials Research Soc, 1985. p. 281-286.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chan, SS, Varker, CJ, Whitfield, JD & Carpenter, R 1985, DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES. in NM Johnson, SG Bishop & GD Watkins (eds), Materials Research Society Symposia Proceedings. vol. 46, Materials Research Soc, Pittsburgh, PA, USA, pp. 281-286.
Chan SS, Varker CJ, Whitfield JD, Carpenter R. DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES. In Johnson NM, Bishop SG, Watkins GD, editors, Materials Research Society Symposia Proceedings. Vol. 46. Pittsburgh, PA, USA: Materials Research Soc. 1985. p. 281-286
Chan, S. S. ; Varker, C. J. ; Whitfield, J. D. ; Carpenter, Ray. / DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES. Materials Research Society Symposia Proceedings. editor / Noble M. Johnson ; Stephen G. Bishop ; George D. Watkins. Vol. 46 Pittsburgh, PA, USA : Materials Research Soc, 1985. pp. 281-286
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