Abstract
Decay of the longitudinal optical (LO) phonons in wurtzite GaN and AlxGa1-xN (x = 0.1) has been studied by subpicoseond time-resolved Raman spectroscopy. In contrast to the usually believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and AlxGa1-xN (x = 0.1) decay primarily into a large wave vector TO and a large wave vector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.
Original language | English (US) |
---|---|
Pages (from-to) | 406-408 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 272 |
Issue number | 1-4 |
DOIs | |
State | Published - Dec 1 1999 |
Event | Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering