Decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1-xN

Kong-Thon Tsen, D. K. Ferry, Stephen Goodnick, A. Salvador, H. Morkoc

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Decay of the longitudinal optical (LO) phonons in wurtzite GaN and AlxGa1-xN (x = 0.1) has been studied by subpicoseond time-resolved Raman spectroscopy. In contrast to the usually believed 2LA decay channel for LO phonons in other semiconductors, our experimental results show that, among the various possible decay channels, the LO phonons in wurtzite GaN and AlxGa1-xN (x = 0.1) decay primarily into a large wave vector TO and a large wave vector LA or TA phonons. These experimental results are consistent with the recent theoretical calculations of the phonon dispersion curves.

Original languageEnglish (US)
Pages (from-to)406-408
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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