DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

Ehsan Vadiee, Evan A. Clinton, Alec M. Fischer, Heather McFavilen, Chantal Arena, Christiana Honsberg, Stephen Goodnick, William A. Doolittle

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3861-3864
Number of pages4
ISBN (Electronic)9781538685297
DOIs
StatePublished - Nov 26 2018
Externally publishedYes
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period6/10/186/15/18

Fingerprint

Semiconductor quantum wells
Solar cells
Temperature
Open circuit voltage
Leakage currents
Short circuit currents
Current density
Degradation

Keywords

  • capacitance-voltage
  • Epitaxial layers
  • high temperature
  • indium gallium nitride
  • single-junction solar cell

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Vadiee, E., Clinton, E. A., Fischer, A. M., McFavilen, H., Arena, C., Honsberg, C., ... Doolittle, W. A. (2018). DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3861-3864). [8548253] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548253

DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. / Vadiee, Ehsan; Clinton, Evan A.; Fischer, Alec M.; McFavilen, Heather; Arena, Chantal; Honsberg, Christiana; Goodnick, Stephen; Doolittle, William A.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3861-3864 8548253.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vadiee, E, Clinton, EA, Fischer, AM, McFavilen, H, Arena, C, Honsberg, C, Goodnick, S & Doolittle, WA 2018, DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548253, Institute of Electrical and Electronics Engineers Inc., pp. 3861-3864, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548253
Vadiee E, Clinton EA, Fischer AM, McFavilen H, Arena C, Honsberg C et al. DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3861-3864. 8548253 https://doi.org/10.1109/PVSC.2018.8548253
Vadiee, Ehsan ; Clinton, Evan A. ; Fischer, Alec M. ; McFavilen, Heather ; Arena, Chantal ; Honsberg, Christiana ; Goodnick, Stephen ; Doolittle, William A. / DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3861-3864
@inproceedings{8bcd2852923a412cb0b9cfdf0e443b9f,
title = "DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures",
abstract = "the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.",
keywords = "capacitance-voltage, Epitaxial layers, high temperature, indium gallium nitride, single-junction solar cell",
author = "Ehsan Vadiee and Clinton, {Evan A.} and Fischer, {Alec M.} and Heather McFavilen and Chantal Arena and Christiana Honsberg and Stephen Goodnick and Doolittle, {William A.}",
year = "2018",
month = "11",
day = "26",
doi = "10.1109/PVSC.2018.8548253",
language = "English (US)",
pages = "3861--3864",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

AU - Vadiee, Ehsan

AU - Clinton, Evan A.

AU - Fischer, Alec M.

AU - McFavilen, Heather

AU - Arena, Chantal

AU - Honsberg, Christiana

AU - Goodnick, Stephen

AU - Doolittle, William A.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.

AB - the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.

KW - capacitance-voltage

KW - Epitaxial layers

KW - high temperature

KW - indium gallium nitride

KW - single-junction solar cell

UR - http://www.scopus.com/inward/record.url?scp=85059898766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059898766&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548253

DO - 10.1109/PVSC.2018.8548253

M3 - Conference contribution

SP - 3861

EP - 3864

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -