DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

Ehsan Vadiee; Evan A. Clinton; Alec M. Fischer; Heather McFavilen; Chantal Arena; Christiana B. Honsberg; Stephen M. Goodnick; William A. Doolittle

doi:10.1109/PVSC.2018.8548253

DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

Ehsan Vadiee, Evan A. Clinton, Alec M. Fischer, Heather McFavilen, Chantal Arena, Christiana B. Honsberg, Stephen M. Goodnick, William A. Doolittle

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3861-3864
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548253
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Keywords

Epitaxial layers
capacitance-voltage
high temperature
indium gallium nitride
single-junction solar cell

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8548253

Cite this

Vadiee, E., Clinton, E. A., Fischer, A. M., McFavilen, H., Arena, C., Honsberg, C. B., Goodnick, S. M., & Doolittle, W. A. (2018). DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3861-3864). Article 8548253 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548253

DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. / Vadiee, Ehsan; Clinton, Evan A.; Fischer, Alec M. et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3861-3864 8548253 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Vadiee, E, Clinton, EA, Fischer, AM, McFavilen, H, Arena, C, Honsberg, CB , Goodnick, SM & Doolittle, WA 2018, DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548253, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 3861-3864, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548253

Vadiee E, Clinton EA, Fischer AM, McFavilen H, Arena C, Honsberg CB et al. DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3861-3864. 8548253. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8548253

Vadiee, Ehsan ; Clinton, Evan A. ; Fischer, Alec M. et al. / DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3861-3864 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{8bcd2852923a412cb0b9cfdf0e443b9f,

title = "DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures",

abstract = "the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.",

keywords = "Epitaxial layers, capacitance-voltage, high temperature, indium gallium nitride, single-junction solar cell",

author = "Ehsan Vadiee and Clinton, {Evan A.} and Fischer, {Alec M.} and Heather McFavilen and Chantal Arena and Honsberg, {Christiana B.} and Goodnick, {Stephen M.} and Doolittle, {William A.}",

note = "Funding Information: The information presented herein was funded in part by the Advanced Research Projects Agency Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8548253",

language = "English (US)",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3861--3864",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

}

TY - GEN

T1 - DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

AU - Vadiee, Ehsan

AU - Clinton, Evan A.

AU - Fischer, Alec M.

AU - McFavilen, Heather

AU - Arena, Chantal

AU - Honsberg, Christiana B.

AU - Goodnick, Stephen M.

AU - Doolittle, William A.

N1 - Funding Information: The information presented herein was funded in part by the Advanced Research Projects Agency Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470. Publisher Copyright: © 2018 IEEE.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.

AB - the effects of the number of quantum wells (QWs), quantum barrier (QB) thickness, and the operating temperature (up to 500 °C) on the In0.12Ga0.88N/GaN multi-quantum well solar cell performance are studied via DC and small signal AC analysis. Based on the modelling and experimental results, the short-circuit current density reduces with increasing the QB thickness. However, increasing the number of QWs did not lead to the open-circuit voltage enhancement (mostly due to the material degradation). It was shown that as the number of QWs increases the active region becomes partially depleted, leading to an increase in the carrier recombination and the leakage current.

KW - Epitaxial layers

KW - capacitance-voltage

KW - high temperature

KW - indium gallium nitride

KW - single-junction solar cell

UR - http://www.scopus.com/inward/record.url?scp=85059898766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059898766&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548253

DO - 10.1109/PVSC.2018.8548253

M3 - Conference contribution

AN - SCOPUS:85059898766

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 3861

EP - 3864

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

DC and Small Signal AC Performance Analysis of InGaN/GaN Multi-Quantum-Well Solar Cells Operated at Elevated Temperatures

Abstract

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Keywords

ASJC Scopus subject areas

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