DC and dynamic switching characteristics of field-plated vertical geometry β-Ga2O3 rectifiers

Jiancheng Yang, Patrick Carey, Fan Ren, Yen Ting Chen, Y. Liao, Chin Wei Chang, Jenshan Lin, Marko Tadjer, S. J. Pearton, David J. Smith, Akito Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga2O3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 1016 cm-3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga2O3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm2) Ga2O3rectifiers were fabricated on a Si-doped n-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga2O3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga2O3 rectifiers. The on-state resistance was 0.26 Ω·cm2 for these largest diodes, decreasing to 5.9 × 10-4 Ω·cm2 for 40x40 μm2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10-3 cm2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga2O3 drift layers. These devices were switched from 0.225 A to -700 V with trr of 82 ns, and from 1 A to -300 V with trr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of trr up to 150°C.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices X
EditorsDavid C. Look, Ferechteh H. Teherani, David J. Rogers
PublisherSPIE
ISBN (Electronic)9781510624801
DOIs
StatePublished - 2019
EventOxide-Based Materials and Devices X 2019 - San Francisco, United States
Duration: Feb 3 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10919
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOxide-Based Materials and Devices X 2019
Country/TerritoryUnited States
CitySan Francisco
Period2/3/192/7/19

Keywords

  • Edge termination
  • Field plate
  • Gallium Oxide
  • On-state resistance
  • Power converters
  • Rectifiers
  • Switching
  • Wide bandgap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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