DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers

Jiancheng Yang, Patrick Carey, Fan Ren, Yen Ting Chen, Y. Liao, Chin Wei Chang, Jenshan Lin, Marko Tadjer, S. J. Pearton, David Smith, Akito Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga 2 O 3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 10 16 cm -3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga 2 O 3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm 2 ) Ga 2 O 3 rectifiers were fabricated on a Si-doped n-Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga 2 O 3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga 2 O 3 rectifiers. The on-state resistance was 0.26 Ω·cm 2 for these largest diodes, decreasing to 5.9 × 10 -4 Ω·cm 2 for 40x40 μm 2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10 -3 cm 2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga 2 O 3 drift layers. These devices were switched from 0.225 A to -700 V with t rr of 82 ns, and from 1 A to -300 V with t rr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of t rr up to 150°C.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices X
EditorsDavid J. Rogers, Ferechteh H. Teherani, David C. Look
ISBN (Electronic)9781510624801
StatePublished - Jan 1 2019
EventOxide-Based Materials and Devices X 2019 - San Francisco, United States
Duration: Feb 3 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceOxide-Based Materials and Devices X 2019
CountryUnited States
CitySan Francisco



  • Edge termination
  • Field plate
  • Gallium Oxide
  • On-state resistance
  • Power converters
  • Rectifiers
  • Switching
  • Wide bandgap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yang, J., Carey, P., Ren, F., Chen, Y. T., Liao, Y., Chang, C. W., Lin, J., Tadjer, M., Pearton, S. J., Smith, D., & Kuramata, A. (2019). DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices X [1091916] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10919). SPIE. https://doi.org/10.1117/12.2515006