DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers

Jiancheng Yang, Patrick Carey, Fan Ren, Yen Ting Chen, Y. Liao, Chin Wei Chang, Jenshan Lin, Marko Tadjer, S. J. Pearton, David Smith, Akito Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga 2 O 3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 10 16 cm -3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga 2 O 3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm 2 ) Ga 2 O 3 rectifiers were fabricated on a Si-doped n-Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga 2 O 3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga 2 O 3 rectifiers. The on-state resistance was 0.26 Ω·cm 2 for these largest diodes, decreasing to 5.9 × 10 -4 Ω·cm 2 for 40x40 μm 2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10 -3 cm 2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga 2 O 3 drift layers. These devices were switched from 0.225 A to -700 V with t rr of 82 ns, and from 1 A to -300 V with t rr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of t rr up to 150°C.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices X
EditorsDavid J. Rogers, Ferechteh H. Teherani, David C. Look
PublisherSPIE
ISBN (Electronic)9781510624801
DOIs
StatePublished - Jan 1 2019
EventOxide-Based Materials and Devices X 2019 - San Francisco, United States
Duration: Feb 3 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10919
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOxide-Based Materials and Devices X 2019
CountryUnited States
CitySan Francisco
Period2/3/192/7/19

Fingerprint

rectifiers
Electric breakdown
Breakdown
Reverse
Diodes
direct current
Vertical
Voltage
Temperature Dependence
Diode
Vapor phase epitaxy
Geometry
geometry
Epitaxy
electrical faults
Doping (additives)
Sweep
Fabrication
Recovery
Range of data

Keywords

  • Edge termination
  • Field plate
  • Gallium Oxide
  • On-state resistance
  • Power converters
  • Rectifiers
  • Switching
  • Wide bandgap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yang, J., Carey, P., Ren, F., Chen, Y. T., Liao, Y., Chang, C. W., ... Kuramata, A. (2019). DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices X [1091916] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10919). SPIE. https://doi.org/10.1117/12.2515006

DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers . / Yang, Jiancheng; Carey, Patrick; Ren, Fan; Chen, Yen Ting; Liao, Y.; Chang, Chin Wei; Lin, Jenshan; Tadjer, Marko; Pearton, S. J.; Smith, David; Kuramata, Akito.

Oxide-Based Materials and Devices X. ed. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2019. 1091916 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10919).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, J, Carey, P, Ren, F, Chen, YT, Liao, Y, Chang, CW, Lin, J, Tadjer, M, Pearton, SJ, Smith, D & Kuramata, A 2019, DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers in DJ Rogers, FH Teherani & DC Look (eds), Oxide-Based Materials and Devices X., 1091916, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10919, SPIE, Oxide-Based Materials and Devices X 2019, San Francisco, United States, 2/3/19. https://doi.org/10.1117/12.2515006
Yang J, Carey P, Ren F, Chen YT, Liao Y, Chang CW et al. DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers In Rogers DJ, Teherani FH, Look DC, editors, Oxide-Based Materials and Devices X. SPIE. 2019. 1091916. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2515006
Yang, Jiancheng ; Carey, Patrick ; Ren, Fan ; Chen, Yen Ting ; Liao, Y. ; Chang, Chin Wei ; Lin, Jenshan ; Tadjer, Marko ; Pearton, S. J. ; Smith, David ; Kuramata, Akito. / DC and dynamic switching characteristics of field-plated vertical geometry β-Ga 2 O 3 rectifiers Oxide-Based Materials and Devices X. editor / David J. Rogers ; Ferechteh H. Teherani ; David C. Look. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga 2 O 3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 10 16 cm -3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga 2 O 3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm 2 ) Ga 2 O 3 rectifiers were fabricated on a Si-doped n-Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga 2 O 3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga 2 O 3 rectifiers. The on-state resistance was 0.26 Ω·cm 2 for these largest diodes, decreasing to 5.9 × 10 -4 Ω·cm 2 for 40x40 μm 2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10 -3 cm 2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga 2 O 3 drift layers. These devices were switched from 0.225 A to -700 V with t rr of 82 ns, and from 1 A to -300 V with t rr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of t rr up to 150°C.",
keywords = "Edge termination, Field plate, Gallium Oxide, On-state resistance, Power converters, Rectifiers, Switching, Wide bandgap semiconductor",
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AU - Liao, Y.

AU - Chang, Chin Wei

AU - Lin, Jenshan

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AB - Reverse breakdown voltages larger than 1 kV have been reported for both unterminated Ga 2 O 3 vertical rectifiers (1000- 1600 V) and field-plated Schottky diodes (1076-2300 V) with an epi thickness of 8-20 μm. If the doping is in the 10 16 cm -3 range, the breakdown is usually in the 500-800V regime. Furthermore, the switching characteristics of discrete Ga 2 O 3 vertical Schottky rectifiers exhibited reverse recovery times in the range of 20 to 30 ns. Large area (up to 0.2 cm 2 ) Ga 2 O 3 rectifiers were fabricated on a Si-doped n-Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+ Ga 2 O 3 (001) substrate. A forward current of 2.2 A was achieved in single-sweep voltage mode, a record for Ga 2 O 3 rectifiers. The on-state resistance was 0.26 Ω·cm 2 for these largest diodes, decreasing to 5.9 × 10 -4 Ω·cm 2 for 40x40 μm 2 devices. We detail the design and fabrication of these devices. In addition, an inductive load test circuit was used to measure the switching performance of field-plated, edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85x10 -3 cm 2 area) and an absolute forward current of 1 A on 8 Μm thick epitaxial β-Ga 2 O 3 drift layers. These devices were switched from 0.225 A to -700 V with t rr of 82 ns, and from 1 A to -300 V with t rr of 64 ns and no significant temperature dependence up to 125°C. There was no significant temperature dependence of t rr up to 150°C.

KW - Edge termination

KW - Field plate

KW - Gallium Oxide

KW - On-state resistance

KW - Power converters

KW - Rectifiers

KW - Switching

KW - Wide bandgap semiconductor

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