Dark currents in double-heterostructure and quantum-well solar cells

Richard Corkish, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-Fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages923-926
Number of pages4
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: Sep 29 1997Oct 3 1997

Other

OtherProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA
Period9/29/9710/3/97

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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  • Cite this

    Corkish, R., & Honsberg, C. (1997). Dark currents in double-heterostructure and quantum-well solar cells. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 923-926). IEEE.