Abstract
Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-Fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 923-926 |
| Number of pages | 4 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: Sep 29 1997 → Oct 3 1997 |
Other
| Other | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference |
|---|---|
| City | Anaheim, CA, USA |
| Period | 9/29/97 → 10/3/97 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics
Cite this
Dark currents in double-heterostructure and quantum-well solar cells. / Corkish, Richard; Honsberg, Christiana.
Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. IEEE, 1997. p. 923-926.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Dark currents in double-heterostructure and quantum-well solar cells
AU - Corkish, Richard
AU - Honsberg, Christiana
PY - 1997
Y1 - 1997
N2 - Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-Fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.
AB - Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-Fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.
UR - http://www.scopus.com/inward/record.url?scp=0031349256&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031349256&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031349256
SP - 923
EP - 926
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
A2 - Anon, null
PB - IEEE
ER -