Abstract
Numerical modelling shows that the separation of the quasi-Fermi potentials in the lower bandgap region of a double-heterostructure may be less than the terminal voltage, resulting in smaller dark currents than would be expected if flat quasi-Fermi levels were assumed. Quasi-Fermi level variations occur as a response to carrier transport limitation by drift and diffusion within the space-charge region or by thermionic emission. This is a possible explanation for the low dark currents which have been measured in quantum-well p-i-n solar cells. This effect, together with evidence that photogenerated carriers can escape from quantum wells with high efficiency, suggests that the inclusion of low-bandgap regions in the depletion regions of solar cells may lead to high efficiency devices.
| Original language | English (US) |
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| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 923-926 |
| Number of pages | 4 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: Sep 29 1997 → Oct 3 1997 |
Other
| Other | Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference |
|---|---|
| City | Anaheim, CA, USA |
| Period | 9/29/97 → 10/3/97 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Condensed Matter Physics