Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Mark S. Bailly, Joseph Karas, Harsh Jain, William J. Dauksher, Stuart Bowden

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiNx on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiNx and SiOx passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work.

Original languageEnglish (US)
Pages (from-to)243-249
Number of pages7
JournalThin Solid Films
Volume612
DOIs
StatePublished - Aug 1 2016

Keywords

  • Femtosecond laser
  • Laser patterning
  • Plating
  • Sacrificial layer
  • Silicon nitride
  • Textured silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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