Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

V. Ya Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu G. Sadofyev, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Backward-wave tubes are used to study the spectra of cyclotron resonance in the range of 150-700 GHz in the AlSb/InAs/AlSb heterostructures with quantum wells and with an electron concentration in a two-dimensional electron gas ranging from 2.7 × 1011 to 8 × 1012 cm 2 at 4.2 K. A significant increase in the cyclotron mass (from 0.03m0 to 0.06m0) is observed as the electron concentration (and, correspondingly, the Fermi energy) increases, which is typical of semiconductors with a nonparabolic dispersion relation. The results obtained are in satisfactory agreement with theoretical calculations of cyclotron masses at the Fermi level in the context of the simplified Kane model.

Original languageEnglish (US)
Pages (from-to)62-66
Number of pages5
JournalSemiconductors
Volume39
Issue number1
DOIs
StatePublished - Mar 4 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells'. Together they form a unique fingerprint.

Cite this