Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

V. Ya Aleshkin; V. I. Gavrilenko; A. V. Ikonnikov; Yu G. Sadofyev; J. P. Bird; Shane Johnson; Yong-Hang Zhang

doi:10.1134/1.1852647

Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

V. Ya Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu G. Sadofyev, J. P. Bird, Shane Johnson, Yong-Hang Zhang

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14 Scopus citations

Abstract

Backward-wave tubes are used to study the spectra of cyclotron resonance in the range of 150-700 GHz in the AlSb/InAs/AlSb heterostructures with quantum wells and with an electron concentration in a two-dimensional electron gas ranging from 2.7 × 10¹¹ to 8 × 10¹² cm ² at 4.2 K. A significant increase in the cyclotron mass (from 0.03m₀ to 0.06m₀) is observed as the electron concentration (and, correspondingly, the Fermi energy) increases, which is typical of semiconductors with a nonparabolic dispersion relation. The results obtained are in satisfactory agreement with theoretical calculations of cyclotron masses at the Fermi level in the context of the simplified Kane model.

Original language	English (US)
Pages (from-to)	62-66
Number of pages	5
Journal	Semiconductors
Volume	39
Issue number	1
DOIs	https://doi.org/10.1134/1.1852647
State	Published - Mar 4 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells",

abstract = "Backward-wave tubes are used to study the spectra of cyclotron resonance in the range of 150-700 GHz in the AlSb/InAs/AlSb heterostructures with quantum wells and with an electron concentration in a two-dimensional electron gas ranging from 2.7 × 1011 to 8 × 1012 cm 2 at 4.2 K. A significant increase in the cyclotron mass (from 0.03m0 to 0.06m0) is observed as the electron concentration (and, correspondingly, the Fermi energy) increases, which is typical of semiconductors with a nonparabolic dispersion relation. The results obtained are in satisfactory agreement with theoretical calculations of cyclotron masses at the Fermi level in the context of the simplified Kane model.",

author = "Aleshkin, {V. Ya} and Gavrilenko, {V. I.} and Ikonnikov, {A. V.} and Sadofyev, {Yu G.} and Bird, {J. P.} and Shane Johnson and Yong-Hang Zhang",

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T1 - Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

AU - Aleshkin, V. Ya

AU - Gavrilenko, V. I.

AU - Ikonnikov, A. V.

AU - Sadofyev, Yu G.

AU - Bird, J. P.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2005/3/4

Y1 - 2005/3/4

N2 - Backward-wave tubes are used to study the spectra of cyclotron resonance in the range of 150-700 GHz in the AlSb/InAs/AlSb heterostructures with quantum wells and with an electron concentration in a two-dimensional electron gas ranging from 2.7 × 1011 to 8 × 1012 cm 2 at 4.2 K. A significant increase in the cyclotron mass (from 0.03m0 to 0.06m0) is observed as the electron concentration (and, correspondingly, the Fermi energy) increases, which is typical of semiconductors with a nonparabolic dispersion relation. The results obtained are in satisfactory agreement with theoretical calculations of cyclotron masses at the Fermi level in the context of the simplified Kane model.

AB - Backward-wave tubes are used to study the spectra of cyclotron resonance in the range of 150-700 GHz in the AlSb/InAs/AlSb heterostructures with quantum wells and with an electron concentration in a two-dimensional electron gas ranging from 2.7 × 1011 to 8 × 1012 cm 2 at 4.2 K. A significant increase in the cyclotron mass (from 0.03m0 to 0.06m0) is observed as the electron concentration (and, correspondingly, the Fermi energy) increases, which is typical of semiconductors with a nonparabolic dispersion relation. The results obtained are in satisfactory agreement with theoretical calculations of cyclotron masses at the Fermi level in the context of the simplified Kane model.

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Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

Abstract

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