Abstract
Capacitive contacts can be used for the measurement of high frequency CV characteristics. This paper addresses the accuracy of this approach and demonstrates that the errors involved are considerably worse than those predicted assuming just two oxide capacitances in series. Practical measurements are presented and compared with those predicted by a theoretical model which includes the effect of depletion under the second contact. This analysis casts doubts upon the suitability of the structure for any quantitative measurements.
Original language | English (US) |
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Pages (from-to) | 25-27 |
Number of pages | 3 |
Journal | Microelectronics Journal |
Volume | 18 |
Issue number | 5 |
DOIs | |
State | Published - Jan 1 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering