CV characteristics of MOS capacitors with two top capacitive contacts

I. G. McGillivray, J. M. Robertson, A. J. Walton

Research output: Contribution to journalArticle

Abstract

Capacitive contacts can be used for the measurement of high frequency CV characteristics. This paper addresses the accuracy of this approach and demonstrates that the errors involved are considerably worse than those predicted assuming just two oxide capacitances in series. Practical measurements are presented and compared with those predicted by a theoretical model which includes the effect of depletion under the second contact. This analysis casts doubts upon the suitability of the structure for any quantitative measurements.

Original languageEnglish (US)
Pages (from-to)25-27
Number of pages3
JournalMicroelectronics Journal
Volume18
Issue number5
DOIs
StatePublished - 1987
Externally publishedYes

Fingerprint

MOS capacitors
capacitors
Oxides
casts
depletion
Capacitance
capacitance
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Control and Systems Engineering

Cite this

CV characteristics of MOS capacitors with two top capacitive contacts. / McGillivray, I. G.; Robertson, J. M.; Walton, A. J.

In: Microelectronics Journal, Vol. 18, No. 5, 1987, p. 25-27.

Research output: Contribution to journalArticle

McGillivray, I. G. ; Robertson, J. M. ; Walton, A. J. / CV characteristics of MOS capacitors with two top capacitive contacts. In: Microelectronics Journal. 1987 ; Vol. 18, No. 5. pp. 25-27.
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