Abstract
The four terminal resistance of a bend in a mesoscopic wire changes sign with increasing temperature. This transition leads to a nonlinear I/V characteristic which can, under suit-able bias conditions, be used to produce frequency doubling.
Original language | English (US) |
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Pages (from-to) | 1177-1178 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 27 |
Issue number | 13 |
DOIs | |
State | Published - Feb 1 1991 |
Externally published | Yes |
Keywords
- Electron mobility
- Resistance
- Semiconductor materials
- Transport processes
ASJC Scopus subject areas
- Electrical and Electronic Engineering