Current-voltage and imaging of TiSi 2 islands on Si(001) surfaces using conductive-tip atomic force microscopy

Jaehwan Oh, R. J. Nemanich

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

Using conducting tip atomic force microscopy (c-AFM), we have measured the current-voltage (I-V) characteristics of individual submicron islands of TiSi 2 on Si(100) surfaces, and we have developed an imaging approach that distinguishes the electrical properties of the islands. The Schottky barrier height (SBH) of the submicron TiSi 2 islands was deduced from the I-V measurements. The results indicate that there is a significant variation of SBH among the islands on the same surface. The measurements employ a conventional AFM with a heavily B-doped diamond tip to obtain the current-voltage relations. In contact mode AFM, electrical signals are extracted independently from the topographic image. In addition, we have modified the imaging method to probe the local electrical properties of a surface with regions of different conductivity. Using a lock-in technique both phase and amplitude images were obtained, and the resultant image is essentially a map of the differential surface conductivity. Using this method, TiSi 2 islands on a Si(100) surface were imaged. This approach can be readily extended to other materials systems.

Original languageEnglish (US)
Pages (from-to)3326-3331
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number6
DOIs
StatePublished - Sep 15 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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