Current transport across the pentacene/CVD-grown graphene interface for diode applications

K. Berke, S. Tongay, M. A. McCarthy, A. G. Rinzler, B. R. Appleton, A. F. Hebard

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display PooleFrenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by PooleFrenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and PooleFrenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.

Original languageEnglish (US)
Article number255802
JournalJournal of Physics Condensed Matter
Volume24
Issue number25
DOIs
StatePublished - Jun 27 2012

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Current transport across the pentacene/CVD-grown graphene interface for diode applications'. Together they form a unique fingerprint.

  • Cite this