Current switching in superconductor-semiconductor bilayers

F. Rahman, Trevor Thornton, R. Huber

Research output: Contribution to journalArticle

Abstract

We describe results of electrical transport experiments on niobium-on-indium arsenide and aluminium-on-indium arsenide bilayers. The temperature-dependent properties of electrical conduction in these bilayers is examined first in order to characterize the quality of super-semi interfaces. Next, we look at the differential resistance of the bilayers as a function of bias current. The switching of current between the metal and semiconductor components of the bilayer gives rise to a quasi-inductive effect as it causes voltage spikes in the composite system. Also described is the variation of critical current for these bilayers with temperature and magnetic field.

Original languageEnglish (US)
Pages (from-to)64-70
Number of pages7
JournalPhysica C: Superconductivity and its Applications
Volume444
Issue number1-2
DOIs
StatePublished - Sep 15 2006
Externally publishedYes

Fingerprint

Indium arsenide
Superconducting materials
indium
Niobium
Semiconductor materials
Bias currents
Critical currents
Aluminum
spikes
niobium
Large scale systems
critical current
Temperature distribution
temperature distribution
Metals
Magnetic fields
aluminum
conduction
composite materials
causes

Keywords

  • Andreev reflection
  • Interfacial phenomena
  • Proximity effect
  • Super-semi hybrid

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Current switching in superconductor-semiconductor bilayers. / Rahman, F.; Thornton, Trevor; Huber, R.

In: Physica C: Superconductivity and its Applications, Vol. 444, No. 1-2, 15.09.2006, p. 64-70.

Research output: Contribution to journalArticle

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