Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Srabanti Chowdhury, Brian L. Swenson, Man Hoi Wong, Umesh K. Mishra

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

Gallium nitride (GaN) is becoming the material of choice for power electronics to enable the roadmap of increasing power density by simultaneously enabling high-power conversion efficiency and reduced form factor. This is because the low switching losses of GaN enable high-frequency operation which reduces bulky passive components with negligible change in efficiency. Commercialization of GaN-on-Si materials for power electronics has led to the entry of GaN devices into the medium-power market since the performance-over- cost of even first-generation products looks very attractive compared to today's mature Si-based solutions. On the other hand, the high-power market still remains unaddressed by lateral GaN devices. The current and voltage demand for high-power conversion application makes the chip area in a lateral topology so large that it becomes difficult to manufacture. Vertical GaN devices would play a big role alongside silicon carbide (SiC) to address the high-power conversion needs. In this paper vertical GaN devices are discussed with emphasis on current aperture vertical electron transistors (CAVETs) which have shown promising performance. The fabrication-related challenges and the future possibilities enabled by the availability of good-quality, cost-competitive bulk GaN material are also evaluated for CAVETs.

Original languageEnglish (US)
Article number074014
JournalSemiconductor Science and Technology
Volume28
Issue number7
DOIs
StatePublished - Jul 2013

Fingerprint

Gallium nitride
gallium nitrides
Power electronics
Transistors
transistors
electronics
apertures
costs
commercialization
gallium nitride
Electrons
entry
Silicon carbide
silicon carbides
Conversion efficiency
availability
form factors
radiant flux density
Costs
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application. / Chowdhury, Srabanti; Swenson, Brian L.; Wong, Man Hoi; Mishra, Umesh K.

In: Semiconductor Science and Technology, Vol. 28, No. 7, 074014, 07.2013.

Research output: Contribution to journalArticle

Chowdhury, Srabanti ; Swenson, Brian L. ; Wong, Man Hoi ; Mishra, Umesh K. / Current status and scope of gallium nitride-based vertical transistors for high-power electronics application. In: Semiconductor Science and Technology. 2013 ; Vol. 28, No. 7.
@article{53abc0776ef741fa8cfb11be9d8fb847,
title = "Current status and scope of gallium nitride-based vertical transistors for high-power electronics application",
abstract = "Gallium nitride (GaN) is becoming the material of choice for power electronics to enable the roadmap of increasing power density by simultaneously enabling high-power conversion efficiency and reduced form factor. This is because the low switching losses of GaN enable high-frequency operation which reduces bulky passive components with negligible change in efficiency. Commercialization of GaN-on-Si materials for power electronics has led to the entry of GaN devices into the medium-power market since the performance-over- cost of even first-generation products looks very attractive compared to today's mature Si-based solutions. On the other hand, the high-power market still remains unaddressed by lateral GaN devices. The current and voltage demand for high-power conversion application makes the chip area in a lateral topology so large that it becomes difficult to manufacture. Vertical GaN devices would play a big role alongside silicon carbide (SiC) to address the high-power conversion needs. In this paper vertical GaN devices are discussed with emphasis on current aperture vertical electron transistors (CAVETs) which have shown promising performance. The fabrication-related challenges and the future possibilities enabled by the availability of good-quality, cost-competitive bulk GaN material are also evaluated for CAVETs.",
author = "Srabanti Chowdhury and Swenson, {Brian L.} and Wong, {Man Hoi} and Mishra, {Umesh K.}",
year = "2013",
month = "7",
doi = "10.1088/0268-1242/28/7/074014",
language = "English (US)",
volume = "28",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

AU - Chowdhury, Srabanti

AU - Swenson, Brian L.

AU - Wong, Man Hoi

AU - Mishra, Umesh K.

PY - 2013/7

Y1 - 2013/7

N2 - Gallium nitride (GaN) is becoming the material of choice for power electronics to enable the roadmap of increasing power density by simultaneously enabling high-power conversion efficiency and reduced form factor. This is because the low switching losses of GaN enable high-frequency operation which reduces bulky passive components with negligible change in efficiency. Commercialization of GaN-on-Si materials for power electronics has led to the entry of GaN devices into the medium-power market since the performance-over- cost of even first-generation products looks very attractive compared to today's mature Si-based solutions. On the other hand, the high-power market still remains unaddressed by lateral GaN devices. The current and voltage demand for high-power conversion application makes the chip area in a lateral topology so large that it becomes difficult to manufacture. Vertical GaN devices would play a big role alongside silicon carbide (SiC) to address the high-power conversion needs. In this paper vertical GaN devices are discussed with emphasis on current aperture vertical electron transistors (CAVETs) which have shown promising performance. The fabrication-related challenges and the future possibilities enabled by the availability of good-quality, cost-competitive bulk GaN material are also evaluated for CAVETs.

AB - Gallium nitride (GaN) is becoming the material of choice for power electronics to enable the roadmap of increasing power density by simultaneously enabling high-power conversion efficiency and reduced form factor. This is because the low switching losses of GaN enable high-frequency operation which reduces bulky passive components with negligible change in efficiency. Commercialization of GaN-on-Si materials for power electronics has led to the entry of GaN devices into the medium-power market since the performance-over- cost of even first-generation products looks very attractive compared to today's mature Si-based solutions. On the other hand, the high-power market still remains unaddressed by lateral GaN devices. The current and voltage demand for high-power conversion application makes the chip area in a lateral topology so large that it becomes difficult to manufacture. Vertical GaN devices would play a big role alongside silicon carbide (SiC) to address the high-power conversion needs. In this paper vertical GaN devices are discussed with emphasis on current aperture vertical electron transistors (CAVETs) which have shown promising performance. The fabrication-related challenges and the future possibilities enabled by the availability of good-quality, cost-competitive bulk GaN material are also evaluated for CAVETs.

UR - http://www.scopus.com/inward/record.url?scp=84879543539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879543539&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/28/7/074014

DO - 10.1088/0268-1242/28/7/074014

M3 - Article

AN - SCOPUS:84879543539

VL - 28

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 074014

ER -