@inproceedings{39f91a62ae1b4fc98f2de62df1d26df3,
title = "Current source gate driver for series connected silicon-carbide (SiC) MOSFETs",
abstract = "SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium voltage drive and high-power converters. In this paper, series connected SiC MOSFETs are used to replace the high voltage Si IGBT. Specifically, a game changing and universally applicable standard block of series connected SiC MOSFETs with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function.",
keywords = "Current source gate driver, Series connection, SiC",
author = "Chunhui Liu and Qin Lei",
year = "2019",
month = may,
day = "24",
doi = "10.1109/APEC.2019.8721929",
language = "English (US)",
series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "991--997",
booktitle = "34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019",
note = "34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 ; Conference date: 17-03-2019 Through 21-03-2019",
}