Current source gate driver for series connected silicon-carbide (SiC) MOSFETs

Chunhui Liu, Qin Lei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and temperature characteristics. In order to significantly improve the efficiency and power density of medium voltage drive and high-power converters. In this paper, series connected SiC MOSFETs are used to replace the high voltage Si IGBT. Specifically, a game changing and universally applicable standard block of series connected SiC MOSFETs with excellent dynamic voltage sharing and high reliability is proposed. The core technology in the block is the current source gate driver with device synchronization function.

Original languageEnglish (US)
Title of host publication34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages991-997
Number of pages7
ISBN (Electronic)9781538683309
DOIs
StatePublished - May 24 2019
Event34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States
Duration: Mar 17 2019Mar 21 2019

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Volume2019-March

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
CountryUnited States
CityAnaheim
Period3/17/193/21/19

Fingerprint

Silicon carbide
Insulated gate bipolar transistors (IGBT)
Electric potential
Power converters
Synchronization
Temperature

Keywords

  • Current source gate driver
  • Series connection
  • SiC

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Liu, C., & Lei, Q. (2019). Current source gate driver for series connected silicon-carbide (SiC) MOSFETs. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 (pp. 991-997). [8721929] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2019.8721929

Current source gate driver for series connected silicon-carbide (SiC) MOSFETs. / Liu, Chunhui; Lei, Qin.

34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 991-997 8721929 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, C & Lei, Q 2019, Current source gate driver for series connected silicon-carbide (SiC) MOSFETs. in 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019., 8721929, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., pp. 991-997, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019, Anaheim, United States, 3/17/19. https://doi.org/10.1109/APEC.2019.8721929
Liu C, Lei Q. Current source gate driver for series connected silicon-carbide (SiC) MOSFETs. In 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 991-997. 8721929. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2019.8721929
Liu, Chunhui ; Lei, Qin. / Current source gate driver for series connected silicon-carbide (SiC) MOSFETs. 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 991-997 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).
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