Current problems in low energy ion beam materials analysis with sims

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A major requirement of the secondary ion mass spectrometry (SIMS) technique is a universal procedure for preparing standards by introducing controlled amounts of any desired element into any substrate. Ion implantation ideally fills this role. Conversely, a major requirement for ion implantation research is a universal analytical technique capable of characterizing the in-depth distribution of implanted species at concentrations of ~ 1 ppm and below. This requirement is being increasingly satisfied by secondary ion mass spectrometry. This review will illustrate the complementary nature of these two techniques with examples from current research.

Original languageEnglish (US)
Pages (from-to)1807-1811
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume26
Issue number1
DOIs
StatePublished - Jan 1 1979
Externally publishedYes

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Secondary ion mass spectrometry
Ion implantation
Ion beams
ion beams
requirements
secondary ion mass spectrometry
ion implantation
energy
Substrates

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Current problems in low energy ion beam materials analysis with sims. / Williams, Peter.

In: IEEE Transactions on Nuclear Science, Vol. 26, No. 1, 01.01.1979, p. 1807-1811.

Research output: Contribution to journalArticle

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