Current-induced switching in a single exchange-biased ferromagnetic layer

Tingyong Chen, Y. Ji, C. L. Chien, M. D. Stiles

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

We demonstrate current-induced switching effects in a single exchanged-biased ferromagnetic layer. A nanodomain can be switched within the ferromagnetic layer by a spin-polarized current injected through a point contact. The high resistance of the hysteretic switching is due to the formation of a domain wall between the nanodomain and the rest of the layer. The switching behavior observed in a single layer is a type of spin-transfer torque effect which is the inverse effect of domain-wall magnetoresistance. At room temperature, nonhysteretic switching behavior with a broad switching current density range is observed.

Original languageEnglish (US)
Article number10C709
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
StatePublished - May 15 2005
Externally publishedYes

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domain wall
high resistance
torque
current density
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Current-induced switching in a single exchange-biased ferromagnetic layer. / Chen, Tingyong; Ji, Y.; Chien, C. L.; Stiles, M. D.

In: Journal of Applied Physics, Vol. 97, No. 10, 10C709, 15.05.2005.

Research output: Contribution to journalArticle

Chen, Tingyong ; Ji, Y. ; Chien, C. L. ; Stiles, M. D. / Current-induced switching in a single exchange-biased ferromagnetic layer. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 10.
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