Current-induced switching in a single exchange-biased ferromagnetic layer

Tingyong Chen, Y. Ji, C. L. Chien, M. D. Stiles

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We demonstrate current-induced switching effects in a single exchanged-biased ferromagnetic layer. A nanodomain can be switched within the ferromagnetic layer by a spin-polarized current injected through a point contact. The high resistance of the hysteretic switching is due to the formation of a domain wall between the nanodomain and the rest of the layer. The switching behavior observed in a single layer is a type of spin-transfer torque effect which is the inverse effect of domain-wall magnetoresistance. At room temperature, nonhysteretic switching behavior with a broad switching current density range is observed.

Original languageEnglish (US)
Article number10C709
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - May 15 2005
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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