Current-density dependence on Ag eFUSEs with TiN underlayers

Anil Indluru; Ekta Misra; Terry Alford

doi:10.1109/LED.2009.2031257

Current-density dependence on Ag eFUSEs with TiN underlayers

Anil Indluru, Ekta Misra, Terry Alford

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 μm) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.

Original language	English (US)
Pages (from-to)	1134-1136
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2031257
State	Published - 2009

Keywords

Electromigration
Fuses
Silver

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2031257

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title = "Current-density dependence on Ag eFUSEs with TiN underlayers",

abstract = "Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 μm) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.",

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doi = "10.1109/LED.2009.2031257",

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AU - Indluru, Anil

AU - Misra, Ekta

AU - Alford, Terry

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N2 - Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 μm) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.

AB - Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 μm) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.

KW - Electromigration

KW - Fuses

KW - Silver

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Current-density dependence on Ag eFUSEs with TiN underlayers

Abstract

Keywords

ASJC Scopus subject areas

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