Abstract

Silver-based metallization has been studied for a potential application as an electrically programmable fuse (eFUSE) device by local Joule heating induced at high current densities. Three different line widths (3.8, 6.3, and 10 μm) are investigated by subjecting them to extremely high current-density conditions. Based on short median lifetime and the topography of the failure sites, the dominant failure mechanism in Ag eFUSEs with TiN barrier layer under these current densities is examined. Evaporation times have also been calculated to correlate the Ag properties with the median failure time. The barrier layer has an important role to play in determining the failure time in these types of eFUSEs.

Original languageEnglish (US)
Pages (from-to)1134-1136
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
StatePublished - 2009

Fingerprint

Current density
Joule heating
Electric fuses
Metallizing
Silver
Linewidth
Topography
Evaporation

Keywords

  • Electromigration
  • Fuses
  • Silver

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Current-density dependence on Ag eFUSEs with TiN underlayers. / Indluru, Anil; Misra, Ekta; Alford, Terry.

In: IEEE Electron Device Letters, Vol. 30, No. 11, 2009, p. 1134-1136.

Research output: Contribution to journalArticle

Indluru, Anil ; Misra, Ekta ; Alford, Terry. / Current-density dependence on Ag eFUSEs with TiN underlayers. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 11. pp. 1134-1136.
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