Abstract
Electrical reliability of GaN HEMT system in both the on state and the off state regime is still a fundamental problem to be solved. To get an insight for the occurrence of the current collapse phenomena in GaN HEMTs, an electro-thermal particle based device simulator consisting of a Monte Carlo-Poisson solver, self consistently coupled with an energy balance solver for both acoustic and optical phonons, was developed. We observe that the incorporation of self-heating effects leads to an increase in the vertical electric field in the gate to drain extension region which can lead to large charge trapping on the surface and also the possibility of forming cracks or pits.
| Original language | English (US) |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 103-109 |
| Number of pages | 7 |
| Volume | 49 |
| Edition | 1 |
| DOIs | |
| State | Published - 2009 |
| Event | 27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012 - Brasilia, Brazil Duration: Aug 30 2012 → Sep 2 2012 |
Other
| Other | 27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012 |
|---|---|
| Country | Brazil |
| City | Brasilia |
| Period | 8/30/12 → 9/2/12 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Current degradation in GaN HEMTs : Is self-heating responsible? / Padmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen.
ECS Transactions. Vol. 49 1. ed. 2009. p. 103-109.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Current degradation in GaN HEMTs
T2 - Is self-heating responsible?
AU - Padmanabhan, Balaji
AU - Vasileska, Dragica
AU - Goodnick, Stephen
PY - 2009
Y1 - 2009
N2 - Electrical reliability of GaN HEMT system in both the on state and the off state regime is still a fundamental problem to be solved. To get an insight for the occurrence of the current collapse phenomena in GaN HEMTs, an electro-thermal particle based device simulator consisting of a Monte Carlo-Poisson solver, self consistently coupled with an energy balance solver for both acoustic and optical phonons, was developed. We observe that the incorporation of self-heating effects leads to an increase in the vertical electric field in the gate to drain extension region which can lead to large charge trapping on the surface and also the possibility of forming cracks or pits.
AB - Electrical reliability of GaN HEMT system in both the on state and the off state regime is still a fundamental problem to be solved. To get an insight for the occurrence of the current collapse phenomena in GaN HEMTs, an electro-thermal particle based device simulator consisting of a Monte Carlo-Poisson solver, self consistently coupled with an energy balance solver for both acoustic and optical phonons, was developed. We observe that the incorporation of self-heating effects leads to an increase in the vertical electric field in the gate to drain extension region which can lead to large charge trapping on the surface and also the possibility of forming cracks or pits.
UR - http://www.scopus.com/inward/record.url?scp=84875839912&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875839912&partnerID=8YFLogxK
U2 - 10.1149/04901.0103ecst
DO - 10.1149/04901.0103ecst
M3 - Conference contribution
AN - SCOPUS:84875839912
SN - 9781607683636
VL - 49
SP - 103
EP - 109
BT - ECS Transactions
ER -