Abstract

Electrical reliability of GaN HEMT system in both the on state and the off state regime is still a fundamental problem to be solved. To get an insight for the occurrence of the current collapse phenomena in GaN HEMTs, an electro-thermal particle based device simulator consisting of a Monte Carlo-Poisson solver, self consistently coupled with an energy balance solver for both acoustic and optical phonons, was developed. We observe that the incorporation of self-heating effects leads to an increase in the vertical electric field in the gate to drain extension region which can lead to large charge trapping on the surface and also the possibility of forming cracks or pits.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages103-109
Number of pages7
Volume49
Edition1
DOIs
StatePublished - 2009
Event27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012 - Brasilia, Brazil
Duration: Aug 30 2012Sep 2 2012

Other

Other27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012
CountryBrazil
CityBrasilia
Period8/30/129/2/12

Fingerprint

High electron mobility transistors
Heating
Degradation
Charge trapping
Phonons
Energy balance
Simulators
Acoustics
Electric fields
Cracks
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Current degradation in GaN HEMTs : Is self-heating responsible? / Padmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen.

ECS Transactions. Vol. 49 1. ed. 2009. p. 103-109.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Padmanabhan, B, Vasileska, D & Goodnick, S 2009, Current degradation in GaN HEMTs: Is self-heating responsible? in ECS Transactions. 1 edn, vol. 49, pp. 103-109, 27th Symposium on MicroelectronicsTechnology and Devices, SBMicro 2012, Brasilia, Brazil, 8/30/12. https://doi.org/10.1149/04901.0103ecst
Padmanabhan, Balaji ; Vasileska, Dragica ; Goodnick, Stephen. / Current degradation in GaN HEMTs : Is self-heating responsible?. ECS Transactions. Vol. 49 1. ed. 2009. pp. 103-109
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