Abstract

In this work we first report on a theoretical model which provides the gate voltage dependence of the piezoelectric polarization charge in GaN HEMT devices. The model utilizes a generalization of Gauss' law, imposing constraints on the electric displacement vector D. The constraint on D is given by the continuity of the perpendicular component of the displacement vector across an interface. Poisson's equation is then solved across various layers under proper boundary conditions for the applied bias. The piezoelectric polarization charge is reduced due to the electromechanical coupling compared to the uncoupled case. Under high sheet electron densities, the correction in the piezoelectric polarization charge is also lower due to smaller electric fields. The theoretical model is then incorporated in the particle-based device simulator and device transfer and output characteristics are calculated without and with the bias dependent polarization charge. We find that percentage change in drain current increases with larger negative bias on the gate, due to the larger vertical electric fields.

Original languageEnglish (US)
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages17-20
Number of pages4
StatePublished - Aug 17 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Publication series

NameTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Keywords

  • Electro-Mechanical coupling
  • GaN HEMTs
  • Polarization charges

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Current degradation due to electromechanical coupling in GaN HEMT's'. Together they form a unique fingerprint.

Cite this