Abstract

In this work we first report on a theoretical model which provides the gate voltage dependence of the piezoelectric polarization charge in GaN HEMT devices. The model utilizes a generalization of Gauss' law, imposing constraints on the electric displacement vector D. The constraint on D is given by the continuity of the perpendicular component of the displacement vector across an interface. Poisson's equation is then solved across various layers under proper boundary conditions for the applied bias. The piezoelectric polarization charge is reduced due to the electromechanical coupling compared to the uncoupled case. Under high sheet electron densities, the correction in the piezoelectric polarization charge is also lower due to smaller electric fields. The theoretical model is then incorporated in the particle-based device simulator and device transfer and output characteristics are calculated without and with the bias dependent polarization charge. We find that percentage change in drain current increases with larger negative bias on the gate, due to the larger vertical electric fields.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages17-20
Number of pages4
StatePublished - 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Fingerprint

Electromechanical coupling
High electron mobility transistors
Polarization
Degradation
Electric fields
Drain current
Poisson equation
Carrier concentration
Simulators
Boundary conditions
Electric potential

Keywords

  • Electro-Mechanical coupling
  • GaN HEMTs
  • Polarization charges

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

Cite this

Padmanabhan, B., Vasileska, D., & Goodnick, S. (2012). Current degradation due to electromechanical coupling in GaN HEMT's. In Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 17-20)

Current degradation due to electromechanical coupling in GaN HEMT's. / Padmanabhan, Balaji; Vasileska, Dragica; Goodnick, Stephen.

Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 17-20.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Padmanabhan, B, Vasileska, D & Goodnick, S 2012, Current degradation due to electromechanical coupling in GaN HEMT's. in Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. pp. 17-20, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 6/18/12.
Padmanabhan B, Vasileska D, Goodnick S. Current degradation due to electromechanical coupling in GaN HEMT's. In Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 17-20
Padmanabhan, Balaji ; Vasileska, Dragica ; Goodnick, Stephen. / Current degradation due to electromechanical coupling in GaN HEMT's. Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. pp. 17-20
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